Low energy sputtering of nickel by normally incident xenon ions

Zhou, Xiaowang; Wadley, H.N.G.; Sainathan, S.

doi:10.1016/j.nimb.2005.02.016

Cited by 16 publications

(12 citation statements)

References 63 publications

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“…For transition metals using argon ions, this is in the 50 eV range. 12,13 The second approach creates a plasma to which a negative bias voltage is applied between it and the substrate. 7,14 The combination of the plasma potential and the applied bias accelerates the ions from the plasma toward the growth surface where they typically make impact with a near normal incidence angle.…”

Section: Introductionmentioning

confidence: 99%

Low energy ion assisted deposition of Ta∕Cu films

Quan

Zhou

et al. 2007

Journal of Applied Physics

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A combination of molecular dynamics simulations and experiments has been used to investigate the use of various low energy ion assisted vapor deposition approaches for controlling the interfacial structures of a model copper/tantalum multilayer system. Films were grown using argon ion beam assistance with either a fixed or modulated ion energy during metal deposition. The effect of sequential ion assistance ͑after layer's deposition͒ was also investigated. The argon ion energy was varied between 0 and 50 eV and the effect on the atomic scale structure of Ta/ Cu film interfaces and the film electrical resistivity were studied. The use of simultaneous argon ion assistance with an ion energy of ϳ10 eV and an ion/metal atom flux ratio of ϳ6 resulted in atomically sharp interfaces with little intermixing, consistent with simulation predictions. Ion impacts in this range activated surface atom jumping and promoted a step flow film growth mode. Higher energies were also successful at interface flattening, but they caused significant intermixing between the layers and increased film's resistivity. This could be reduced using modulated ion energy and sequential ion beam assistance. This was again consistent with atomic scale simulations, which indicated that metal layers deposited over an interface before ion assistance was initiated impeded atom exchange across interfaces and therefore intermixing.

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Section: Introductionmentioning

confidence: 99%

Low energy ion assisted deposition of Ta∕Cu films

Quan

Zhou

et al. 2007

Journal of Applied Physics

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“…Molecular dynamics is a valid tool for this purpose and has been used in other sputter analysis studies. [13][14][15][16] For the interactions of the boron and nitrogen atoms with one another, the interatomic potential presented by Albe et al is used. 17,18 This is a modified form of the multi-body potential first proposed by Tersoff for multi-component systems.…”

Section: Methodsmentioning

confidence: 99%

Calculation of Boron Nitride Sputter Yields Under Low Energy Xenon Ion Bombardment

Yim¹,

Falk²,

Keidar³

et al. 2007

43rd AIAA/ASME/SAE/ASEE Joint Propulsion Conference &Amp;amp; Exhibit

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An accurate description of the sputter yield of boron nitride (BN) from xenon ion bombardment at low energies is needed for improving the prediction capabilities of Hall thruster erosion models and in turn for lifetime prediction models. However, sputter yield data at low (< 300 eV) energies does not exist. The molecular dynamics method is employed to model the sputtering of BN at low energies. The results are compared to existing experimental data at higher energies. A qualitative comparison with a quantumstatistical model is also performed.

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“…The time between subsequent impacts was 1 ps, which was observed to be sufficiently long for most sputtering events to have occurred. The number of projectile atoms that were impacted in each simulation was chosen to provide a flux of 0.04 atoms/Å 2 , matching simulations conducted by Zhou et al [7]. Following the simulation, the final coordinates and velocities of the atoms are used to compute a range of statistics.…”

Section: Molecular Dynamics Modelmentioning

confidence: 99%

“…This combination has been successfully applied to low-energy xenon-ion bombardment of nickel [7], and high-energy xenon-ion bombardment of gold, silver and molybdenum [8,9]. The method is robust across a wide variety of systems since screened nuclear repulsion potentials can be calculated for most atom pairs and the EAM potential has been determined for a large number of metals and alloys.…”

Section: Introductionmentioning

confidence: 99%