Low energy X-ray radiation impact on coated Si constructions

Adlienė, Diana; Cibulskaitė, Inga; Meškinis, Šarūnas

doi:10.1016/j.radphyschem.2010.05.003

Cited by 2 publications

(2 citation statements)

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“…A weak magnetic field can stimulate the reorientation of the electron spin of the atomic defects [33][34][35][36]. Consequently, new nanoscale complexes are formed, which have other kinetic parameters and change the characteristics of the silicon structures [37][38][39][40]. Therefore, the influence of such fields can be used as an additional technological operation to improve the characteristics of silicon structures.…”

Section: Introductionmentioning

confidence: 99%

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

et al. 2022

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The effect of a weak magnetic field (B = 0.17 T) and X-irradiation (D < 520 Gy) on the rearrangement of the defective structure of near-surface p-type silicon layers was studied. It was established that the effect of these external fields increases the positive accumulated charge in the region of spatial charge (RSC) and in the SiO2 dielectric layer. This can be caused by both defects in the near-surface layer of the semiconductor and impurities contained in the dielectric layer, which can generate charge carriers. It was found that the near-surface layers of the barrier structures contain only one deep level in the silicon band gap, with an activation energy of Ev + 0.38 eV. This energy level corresponds to a complex of silicon interstitial atoms SiI+SiI. When X-irradiated with a dose of 520 Gy, a new level with the energy of Ev + 0.45 eV was observed. This level corresponds to a point boron radiation defect in the interstitial site (BI). These two types of defect are effective in obtaining charge carriers, and cause deterioration of the rectifier properties of the silicon barrier structures. It was established that the silicon surface is quite active, and adsorbs organic atoms and molecules from the atmosphere, forming bonds. It was shown that the effect of a magnetic field causes the decay of adsorbed complexes at the Si–SiO2 interface. The released hydrogen is captured by acceptor levels and, as a result, the concentration of more complex Si–H3 complexes increases that of O3–Si–H.

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Section: Introductionmentioning

confidence: 99%

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

et al. 2022

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“…Малі за величиною зовнішні чинники також можуть активувати перебудовчі процеси наявних нанорозмірних комплексів та їх кластерів у напівпровідникових структурах. В основному це пов'язано із збудженням електронної підсистеми дефектів, наявних на поверхні кремнію та на межі SiO2-Si [15][16][17][18]. Тому обробка такими полями може бути використана як додаткова технологічна операція для покращення характеристик кремнієвих структур.…”

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RADIATIVE AND MAGNETICALLY STIMULATED CHANGE OF THE ELECTRICAL PROPERTIES OF THE SiO2-Si STRUCTURE WITH A HIGH CONTENT OF DISLOCATION COMPLEXES

Slobodzyan¹,

Kushlyk²,

Lys³

et al. 2022

ELIT

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Low energy X-ray radiation impact on coated Si constructions

Cited by 2 publications

References 33 publications

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

RADIATIVE AND MAGNETICALLY STIMULATED CHANGE OF THE ELECTRICAL PROPERTIES OF THE SiO2-Si STRUCTURE WITH A HIGH CONTENT OF DISLOCATION COMPLEXES

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