“…While high MR at low magnetic field would help in reducing the bit size on the recording media (thereby increasing the data storage capacity), at the same time the good electrical conductivity will ensure the better connectivity of the device with external circuitry. Recently, several reports indicated that the metal doping/addition or its oxide addition in manganites was helpful in observing improved peak magnetoresistance at low fields with better electrical resistivity [5][6][7][8][9][10][11][12][13][14]. Xiong et al carried out the addition of Pd in La 0.7 Ca 0.2 Sr 0.1 MnO 3 and reported that Pd addition had a little influence on the Curie temperature (T C ) whereas it decreased the electrical resistivity dramatically and shifted the insulator-metal transition temperature (T P ) towards a higher value substantially [5].…”