Low-flux elucidation of initial growth of Ge clusters deposited on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>Si</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>111</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn></mml:mrow></mml:math>observed by scanning tunneling microscopy

Ansari, Z. A.; Arai, Toyoko; Tomitori, Masahiko

doi:10.1103/physrevb.79.033302

Cited by 5 publications

(8 citation statements)

References 28 publications

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“…On account of poor electronic population of the Ge cluster near to the Fermi level, we speculate that the Ge atoms in clusters may not be compact. Similar results can be found for the critical nucleus and Ge‐related ring cluster for the submonolayer adsorption of Ge on Si(111)‐(7 × 7) surface. It should be noted that the adatoms of a clean Si(111)‐(7 × 7) surface are characterized by metallic‐like surface states, which make up the STM scan (7 × 7) images at small sample bias.…”

Section: Resultssupporting

confidence: 82%

“…Some clusters keep growing to bigger size with rounded shape, which is more stable. Yan et al study of initial adsorption of Ge on Si(111)‐(7 × 7) demonstrated that the irregular Ge cluster originates from the Ge critical nuclei in the middle of the triangular half cells of the Si(111)‐(7 × 7) surface . Thus, the regular clusters found in this study might be formed by adding additional Ge incoming atoms from the initial adsorption of critical nuclei, up to the formation of two‐dimensional nanostructures in the growth of ordered epitaxial Ge layers.…”

Section: Resultsmentioning

confidence: 51%

“…However, these Ge adatoms interact with each other through the silicon substrate . This model is slightly different to that proposed by Ansari et al From the STM images shown in Fig. (a) and (b), the Ge nanoclusters are constrained in half unit cell.…”

Section: Resultsmentioning

confidence: 66%

“…Moreover, many earlier studies have shown the structural relation between Si(111)‐(7 × 7) and Ge adsorption . Undoubtly, the dangling bonds of the (7 × 7) reconstruction play an important role in the formation and growth of the clusters.…”

Section: Resultsmentioning

confidence: 99%

“…(a) and (b), the Ge nanoclusters are constrained in half unit cell. The STM image in ref [] showed the Ge atoms on the adatoms slightly stuck out of the half unit cell. They also reported that the initial Ge atoms were substituted for Si corner adatom sites of the faulted half unit cell.…”

Section: Resultsmentioning

confidence: 99%

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Nucleation and growth of Ge nanoclusters on the Si(111)-(7 × 7) surface studied by scanning tunneling microscopy

Zhang

Chen

et al. 2014

Surf. Interface Anal.

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Nucleation and growth of two-dimensional Ge nanoclusters on the Si(111)-(7 × 7) surface at elevated substrate temperatures have been studied using scanning tunneling microscopy. The uniformity of the Ge nanoclusters is improved with the increase of substrate temperature, and ordered Ge nanoclusters are formed on the faulted and unfaulted halves of (7 × 7) unit cell at substrate temperature of 200°C. It is proposed that the Ge nanoclusters consist of six Ge atoms with three on top of the center adatoms and others on the rest atoms within one half of a unit cell.

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Section: Resultssupporting

confidence: 82%

Section: Resultsmentioning

confidence: 51%

Section: Resultsmentioning

confidence: 66%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 3 more Smart Citations

Nucleation and growth of Ge nanoclusters on the Si(111)-(7 × 7) surface studied by scanning tunneling microscopy

Zhang

Chen

et al. 2014

Surf. Interface Anal.

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Influences of H on the Adsorption of a Single Ag Atom on Si(111)-7 × 7 Surface

Lin

2009

Nanoscale Res Lett

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The adsorption of a single Ag atom on both clear Si(111)-7 × 7 and 19 hydrogen terminated Si(111)-7 × 7 (hereafter referred as 19H-Si(111)-7 × 7) surfaces has been investigated using first-principles calculations. The results indicated that the pre-adsorbed H on Si surface altered the surface electronic properties of Si and influenced the adsorption properties of Ag atom on the H terminated Si surface (e.g., adsorption site and bonding properties). Difference charge density data indicated that covalent bond is formed between adsorbed Ag and H atoms on 19H-Si(111)-7 × 7 surface, which increases the adsorption energy of Ag atom on Si surface.

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Inhibiting molecular array formation on Si(111)-7×7using site-selective Ge/Si exchange

Weymouth¹,

McLean²,

Miwa³

et al. 2012

Phys. Rev. B

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Low-flux elucidation of initial growth of Ge clusters deposited onSi(111)−7×7observed by scanning tunneling microscopy

Cited by 5 publications

References 28 publications

Nucleation and growth of Ge nanoclusters on the Si(111)-(7 × 7) surface studied by scanning tunneling microscopy

Nucleation and growth of Ge nanoclusters on the Si(111)-(7 × 7) surface studied by scanning tunneling microscopy

Influences of H on the Adsorption of a Single Ag Atom on Si(111)-7 × 7 Surface

Inhibiting molecular array formation on Si(111)-7×7using site-selective Ge/Si exchange

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