Low-frequency dielectric permittivity of C60

Chern, G.; Mathias, H.; Testardi, L. R.; Seger, L.; Schlenoff, Joseph B.

doi:10.1007/bf00732372

Cited by 7 publications

(8 citation statements)

References 11 publications

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“…Figure 6b shows the data calculated using the value for the low frequency dielectric permittivity of ε r = 5. 59 When the photon energy increases from 2.25 to 2.4 eV, r 0 increases approximately linearly. Above 2.4 eV the r 0 (hv) dependence becomes weaker.…”

Section: Discussionmentioning

confidence: 93%

Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C₆₀ and PCBM

et al. 2016

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In an endeavor to examine how optical excitation of C60 and PCBM contribute to the photogeneration of charge carriers in organic solar cells, we investigated stationary photogeneration in single-layer C60 and PCBM films over a broad spectrum as a function of the electric field. We find that intrinsic photogeneration starts at a photon energy of about 2.25 eV, i.e., about 0.4 eV above the first singlet excited state. It originates from charge transfer type states that can autoionize before relaxing to the lower-energy singlet S1 state, in the spirit of Onsager’s 1938 theory. We analyze the internal quantum efficiency as a function of electric field and photon energy to determine (1) the Coulombic binding and separation of the electron–hole pairs, (2) the value of the electrical gap, and (3) which fraction of photoexcitations can fully separate at a given photon energy. The latter depends on the coupling between the photogenerated charge transfer states and the eventual charge transporting states. It is by a factor of 3 lower in PCBM. Close to the threshold energy for intrinsic photoconduction (2.25 eV), the generating entity is a photogenerated electron–hole pair with roughly 2 nm separation. At higher photon energy, more expanded pairs are produced incoherently via thermalization.

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Section: Discussionmentioning

confidence: 93%

Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C₆₀ and PCBM

et al. 2016

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“…Two other well-studied materials are C 60 [71][72][73][74] and alltrans retinal [75,76]. C 60 is of particular interest as it has, because of its high symmetry, only four Ir-active modes [72].…”

Section: Accuracy Of the Vibrational Energies And Ir Band Areasmentioning

confidence: 99%

Vibrational mode contribution to the dielectric permittivity of disordered small-molecule organic semiconductors

Vries

Coehoorn

2020

Phys. Rev. Materials

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“…The slope of the linear function can lead us to calculate N T . Besides the physical constant q,  0 and k, the relative dielectric constants are taken 2.7 for SU8 gate insulator [18] and 5 for C 60 film [19]. The thickness of the gate insulator is 1.2 µm.…”

Section: Morphology Of C 60 Active Layer As a Function Of The Annealimentioning

confidence: 99%

Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C60 active layer

Tao

Mohammed‐Brahim

Lei

et al. 2018

Solid-State Electronics

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Towards fully printed organic electronics, bottom-gate, bottom contacts fullerene based organic FETs (OFETs) are fabricated using inkjet printing drop-on-demand technology for the deposition of gate contact, organic gate insulator and source and drain contacts. The last layer of this structure that is the semiconducting fullerene C 60 film, is deposited by thermal evaporation at ambient temperature. Using physical and electrical analysis, the electrical performances are optimized by studying the effect of the thickness of the C 60 film and of the post-thermal annealing of the OFET. A quantitative relationship between the crystalline structure of the C 60 semiconducting layer (grain size and surface roughness) and the electrical performance of the OFETs is demonstrated. The best performance as determined from the values of the electrical parameters of the OFETs are obtained for 90 nm thick C 60 film and after an annealing of the OFET at 200°C. The answer of present nearly fully printed OFETs to a voltage pulse applied to the gate lead to a switching time of 13 ms, and then to application frequency of some 10Hz. This result opens the way to potential main application in electronic circuits for the treatment of analog signals coming from the human body activities.

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Low-frequency dielectric permittivity of C60

Cited by 7 publications

References 11 publications

Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C₆₀ and PCBM

Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C₆₀ and PCBM

Vibrational mode contribution to the dielectric permittivity of disordered small-molecule organic semiconductors

Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C60 active layer

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Low-frequency dielectric permittivity of C60

Cited by 7 publications

References 11 publications

Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C60 and PCBM

Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C60 and PCBM

Vibrational mode contribution to the dielectric permittivity of disordered small-molecule organic semiconductors

Impact of the post-thermal annealing on OFETs using printed contacts, printed organic gate insulator and evaporated C60 active layer

Contact Info

Product

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Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C₆₀ and PCBM

Role of Intrinsic Photogeneration in Single Layer and Bilayer Solar Cells with C₆₀ and PCBM