Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films

We report experimental investigation of laser‐assisted debonding of GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) technique on sapphire substrates. The debonded HEMTs were transferred onto silicon substrate for better thermal dissipation during operation. Dc characterization indicated no degradation in the I–V characteristics as long as the optimized laser power was used in the debonding process. Transmission electron microscopy (TEM) of the AlGaN/GaN heterojunctions before and after the laser debonding process did not indicate any increase in the dislocation density at the heterointerface. We have also conducted detailed characterizations of the low‐frequency noise properties to investigate the defect properties over the entire active area of the device. Experimental data on the voltage noise power spectra measured from the same device before and after laser debonding indicated no significant change in the magnitude of the flicker noise over a wide temperature range. The results of XRD measurements revealed that the FWHM values before and after debonding are basically the same and also suggested that both out‐of‐plane tensile and in‐plane compressive stresses present were both removed after the laser processing. Our results clearly demonstrate that the laser‐assisted debonding process did not result in the increase in the material defect density. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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DC characterization of laser‐debonded GaN HEMTs

Chan

Leung

Pilkuhn

et al. 2007

Physica Status Solidi (a)

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GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

Zhang¹,

Ruan²,

Chen³

et al. 2009

J. Semicond.

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A process methodology has been adopted to transfer GaN thin films grown on sapphire substrates to Si substrates using metal bonding and laser lift-off techniques. After bonding, a single KrF (248 nm) excimer laser pulse was directed through the transparent sapphire substrates followed by low-temperature heat treatment to remove the substrates. The influence of bonding temperature and energy density of the excimer laser on the structure and optical properties of GaN films were investigated systemically. Atomic force microscopy, X-ray diffraction and photoluminescence measurements showed that (1) the quality of the GaN film was higher at a lower bonding temperature and lower energy density; (2) the threshold of the energy density of the excimer laser lift-off GaN was 300 mJ/cm2. The root-mean-square roughness of the transferred GaN surface was about 50 nm at a bonding temperature of 400 °C.

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Low-frequency excess noise characterizations of laser-assisted de-bonded GaN films

Cited by 2 publications

References 32 publications

DC characterization of laser‐debonded GaN HEMTs

DC characterization of laser‐debonded GaN HEMTs

GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off

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