Low frequency noise analysis on organic thin film transistors

Ke, Lin; Dolmanan, Surani Bin; Shen, Lu; Chellappan, Vijila; Chua, Soo Jin; Png, Rui‐Qi; Chia, Perq-Jon; Chua, Lay‐Lay; Ho, Peter K. H.

doi:10.1063/1.3044440

Cited by 31 publications

(23 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Low-frequency noise (LFN) analysis is known as an elegant tool to investigate dielectric quality and thus to understand the channel transport mechanisms. So far, few works on OFETs' LFN have been reported [5][6][7][8][9][10]. Different results were observed and explained due to the various organic materials used as semiconductor, such as poly-crystalline-like small molecular semiconductors [5,8,9] or amorphous-like polymer semiconductors [7,8,10].…”

Section: Introductionmentioning

confidence: 99%

Origin of low-frequency noise in pentacene field-effect transistors

Minari

Tsukagoshi

et al. 2011

Solid-State Electronics

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Origin of low-frequency noise in pentacene field-effect transistors

Minari

Tsukagoshi

et al. 2011

Solid-State Electronics

View full text Add to dashboard Cite

“…Previous reports have mentioned that the traps in the grain boundaries dominate the LFN in OTFTs and even proposed that the traps in the boundaries could affect the slope of the PSD. 15,20,21 However, the relation between the slope and the traps in OTFTs is still not yet provided by any model. In this work, we propose a model based on the generationrecombination (GR) process of charge carriers in the accumulation layer and gate dielectric to explain the slope and magnitude of the PSD measured for pentacene OTFTs.…”

Section: Introductionmentioning

confidence: 99%

A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

Han

Qian

Leung

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

By including the generation-recombination process of charge carriers in conduction channel, a model for low-frequency noise in pentacene organic thin-film transistors (OTFTs) is proposed. In this model, the slope and magnitude of power spectral density for low-frequency noise are related to the traps in the gate dielectric and accumulation layer of the OTFT for the first time. The model can well fit the measured low-frequency noise data of pentacene OTFTs with HfO 2 or HfLaO gate dielectric, which validates this model, thus providing an estimate on the densities of traps in the gate dielectric and accumulation layer. It is revealed that the traps in the accumulation layer are much more than those in the gate dielectric, and so dominate the low-frequency noise of pentacene OTFTs. V C 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4816103] 044503-3 Han et al. J. Appl. Phys. 114, 044503 (2013) [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 136.165.238.131 On: Mon, 22 Dec 2014 16:48:42 044503-4 Han et al. J. Appl. Phys. 114, 044503 (2013) [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 136.165.238.131 On: Mon, 22 Dec 2014 16:48:42 044503-5 Han et al. J. Appl. Phys. 114, 044503 (2013) [This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to ] IP: 136.165.238.131 On: Mon, 22 Dec 2014 16:48:42 044503-6 Han et al.

show abstract

“…It is known that jitter, which are variations of the edge of a digital signal from true periodicity, often impairs the bit error rate in digital logic, which becomes more predominant in nanoscale devices and sensing applications 15,16 . Recent investigations of the 1/f noise in organic field-effect transistors based on π-conjugated polymers [17][18][19] , amorphous or polycrystalline small molecules [20][21][22][23][24][25][26] were mainly focusing on device degradation under ambient and/or irradiated conditions, and on the contact resistance effect. Unfortunately, these organic compounds typically have unavoidable structural disorder and their mobility is not sufficient for high-speed circuit operation.…”

mentioning

confidence: 99%

Remarkably low flicker noise in solution-processed organic single crystal transistors

et al. 2018

View full text Add to dashboard Cite

Low-frequency noise generated by a fluctuation of current is a key issue for integrating electronic elements into a high-density circuit. Investigation of the noise in organic field-effect transistors is now sharing the spotlight with development of printed integrated circuits. The recent improvement of field-effect mobility (up to 15 cm 2 V −1 s −1 ) has allowed for organic integrated circuits with a relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding of the noise feature will be indispensable to further improve the circuit stability and durability. Here we performed noise measurements in solution-processed organic single crystal transistors, and discovered that a low trap density-of-states due to the absence of structural disorder in combination with coherent band-like transport gives rise to an unprecedentedly low flicker noise. The excellent noise property in organic single crystals will allow their potential to be fully exploited for high-speed communication and sensing applications.

show abstract

Low frequency noise analysis on organic thin film transistors

Abstract: A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

Cited by 31 publications

References 21 publications

Origin of low-frequency noise in pentacene field-effect transistors

Origin of low-frequency noise in pentacene field-effect transistors

A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

Remarkably low flicker noise in solution-processed organic single crystal transistors

Contact Info

Product

Resources

About