Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

Simoen, Eddy; Mercha, A.; Pantisano, L.; Claeys, Corneel; Young, E.

doi:10.1109/ted.2004.826877

Cited by 107 publications

(71 citation statements)

References 13 publications

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“…It has been shown that the Hf-related defects significantly enhance the low-frequency (LF) noise (1/f noise) of the drain current with respect to conventional SiO 2 gate dielectrics [9,10]. It has been earlier shown that the IL thickness affects the noise performance in both n-and pMOSFETs, where a reduced interfacial layer thickness leads to higher 1/f noise values [11]. This is due to bringing the high-j layer closer to the Si-SiO 2 (IL), which enhances the low-frequency noise mainly due to number and mobility fluctuations [11,12].…”

Section: Introductionmentioning

confidence: 99%

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Srinivasan

Crupi

Simoen

et al. 2007

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Srinivasan

Crupi

Simoen

et al. 2007

Microelectronics Reliability

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“…7 [19]. Moreover, these in situ wafers show lower N t in comparison with reported ex situ chemical oxide wafers [6] [14]. The variation observed in N t can be partly due to traps in the IL and different quality HfO 2 samples.…”

Section: Resultsmentioning

confidence: 62%

A study of low-frequency noise on high-k/metal gate stacks with in situ SiO<inf>x</inf> interfacial layer

Olyaei

Malm

Litta

et al. 2013

2013 22nd International Conference on Noise and Fluctuations (ICNF)

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“…4e we compare the typical D ot extracted for our BPFETs with literature values for different technologies. [33][34][35][36][37][38][39][40] At room temperature the density of active oxide traps in our devices is~10 17 cm…”

Section: Resultsmentioning

confidence: 99%

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

et al. 2017

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Black phosphorus is considered a very promising semiconductor for two-dimensional field-effect transistors. Initially, the main disadvantage of this material was thought to be its poor air stability. However, recent studies have shown that this problem can be solved by suitable encapsulation. As such, long-term studies of the outstanding properties of black phosphorus devices have become possible. In particular, here we examine highly-stable black phosphorus field-effect transistors and demonstrate that they can exhibit reproducible characteristics for at least 17 months. Furthermore, we notice some improvement in the performance of black phosphorus devices after this long time, i.e., positive aging. Although our black phosphorus devices are stable at room temperature, we show that their performance is affected by thermally activated charge trapping by oxide traps into the adjacent SiO 2 substrate layer. Aiming to analyze the dynamics of these defects in detail, we perform an accurate mapping of oxide traps with different time constants using the 'extended incremental hysteresis sweep method'. Our results show that at room temperature the extracted oxide trap densities are (i) few orders of magnitude lower than for MoS 2 /SiO 2 transistors and (ii) close to those reported for more mature Si/SiO 2 devices (~10 17 cm). Taking into account the novelty of black phosphorus and recent issues with its stability, these values must be considered unexpectedly low.

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Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

Cited by 107 publications

References 13 publications

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

A study of low-frequency noise on high-k/metal gate stacks with in situ SiO<inf>x</inf> interfacial layer

Highly-stable black phosphorus field-effect transistors with low density of oxide traps

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