Low frequency noise characterization and modelling in ultrathin oxide MOSFETs

1/f Noise: The Funeral is Cancelled (or Postponed)

“…As mentioned, for example, in Ref. 6, the drain current noise of MOSFETs with L G = 30 nm and W = 10 μπι (area A = 0.3 μιτι 2 ) "shows a clear 1//noise behavior over which some Lorentzian G-R components may superimpose".…”

Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides

“…The normalized gate noise is more important for sSi technology (up to a factor 5) because of the largest gate-leakage current. The measured data are well interpreted in strong inversion by a simple gate current noise model (continuous lines) based on the flat band voltage fluctuation concept [12] which already proved very effective in describing the gate current in previous studies [6]. The gate current noise model is written as following expression: where g G is gate conductance and S G VFB ðf Þ the density spectral of flat band voltage associated to the gate.…”

“…Finally, a special attention is given to the excess drain noise in large area device due to the importance of the gate-leakage noise. We explain this particular increase of the 1/f noise by proper analysis of both drain and gate current noise contributions [6].…”

“…For the longest geometries of strained-Si technology, the contribution of the gate current noise involves an important low frequency noise excess as for ultrathin gate oxides n-MOSFETs [6] (see Fig. 7).…”

Excess drain noise simulation in ultrathin oxides MOSFETs

“…The gate noise impact is experimentally observed on the devices with long gates and correspondingly high gate-leakage currents. Previously, the low frequency noise characterization of n-MOSFETs from an advanced CMOS technology with 1.2 nm gate oxides thickness, enabled us to interpret the significant 1/f noise increase in strong inversion by proper analysis of both drain and gate current noise contributions [3].…”