Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

Abstract

The analysis of experimental data following the McWhorter model for the low frequency noise in amorphous Si thin film transistors (TFTs) with SiNx gate dielectric revealed relatively low density of traps Nt≈1019 (cm3 eV)−1. This value is close to the lower limit ever reported for amorphous and polycrystalline Si TFTs. Trap density only slightly increases with the increase of the gate voltage, i.e., approaching the conduction band edge.