LOW FREQUENCY NOISE IN POLY-<font>SI</font>- AND POLY-<font>SIGE</font>-GATED MOSFETS

Johansen, J.A.; Figenschau, Hallvar; Chen, Xuyuan; Rheenen, A. Van; Salm, Cora

doi:10.1142/9789812811165_0036

Cited by 1 publication

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“…So far, only limited work has been done on this issue. 97,98 For example, a fine-grain poly-Si gate was observed to lead to a significant reduction of the 1/f noise compared with an amorphous silicon gate, while the use of Ti or Co gate silicidation had no impact. 97 Replacing poly-Si by poly-SiGe yields a lower noise for the p-channel transistors, with no effect for the n-MOSFETs.…”

Section: Impact Of Process Modules On the Lf Noise Of Deep Submicrome...mentioning

confidence: 99%

“…97 Replacing poly-Si by poly-SiGe yields a lower noise for the p-channel transistors, with no effect for the n-MOSFETs. 98 Now, strong research efforts are being devoted to the development of metal gate technologies 93 and their noise characterization. In the section on device engineering, some initial results related to Mo gates are discussed.…”

Section: Impact Of Process Modules On the Lf Noise Of Deep Submicrome...mentioning

confidence: 99%

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Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Claeys

Mercha

Simoen

2004

J. Electrochem. Soc.

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This overview focuses on the different types of noise occurring in deep submicrometer silicon metal oxide semiconductor field-effect transistors and their use as an analytical tool. The noise sources comprise white noise, generation-recombination noise, random telegraph signal fluctuations, and 1/f or flicker noise. The fundamental basis of each noise type is briefly described and illustrated by some practical examples. In a second part, the impact of the properties of the silicon substrate (orientation, crystallization technique, silicon-on-insulator, SiGe) on the noise performance is discussed. Finally, the influence on the low-frequency noise behavior of different advanced process modules, such as gate stack, device isolation, silicidation, and gate engineering, is illustrated. © 2004 The Electrochemical Society. All rights reserved.

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Section: Impact Of Process Modules On the Lf Noise Of Deep Submicrome...mentioning

confidence: 99%

Section: Impact Of Process Modules On the Lf Noise Of Deep Submicrome...mentioning

confidence: 99%