Low-frequency noise in proton damaged LDD MOSFET's

Hardy, T.; Deen, M. Jamal; Murowinski, Rick

doi:10.1109/16.772474

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…6 for 0.4 mA bias current, where the separate contribution of flicker noise has also been represented. The question of correlation between sources has been analyzed in this case: the simulation of the completely biased detector was done, first considering separately contributions of shot noise, flicker noise, thermal noise, and then adding quadratically all those quantities (15). On the other hand, all the noise sources were included together in a single simulation.…”

Section: B) Pseudo-analytical Resultsmentioning

confidence: 99%

“…11) inspired in [15] was used to obtain the power spectral density of both the stand-alone diode and a complete detector using model MZB-9161 (as model HSCH-9161 was no longer available at that time). In [16], a more complex scheme is proposed to de-embed the noise contribution of a single detector in a system containing three detectors.…”

Section: Setup For Stand-alone Diode and Detector Power Spectral Dmentioning

confidence: 99%

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Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Gutiérrez

Zeljami

Villa

et al. 2015

Int. J. Microw. Wireless Technol.

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Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement je ' ssica gutie ' rrez, kaoutar zeljami, enrique villa, beatriz aja, maria luisa de la fuente, sergio sancho and juan pablo pascual This paper presents and discusses several methods for predicting the low-frequency (LF) noise at the output of a mm-wave detector. These methods are based on the extraction of LF noise source parameters from the single diode under a specific set of bias conditions and the transfer or conversion of these noise sources, under different operating conditions including cyclostationary regime, to the quasi-dc output of a mm-wave detector constructed with the same model of diode. The noise analysis is based on a conversion-matrix type formulation, which relates the carrier noisy sidebands of the input signal with the detector output spectrum through a pair of transfer functions obtained in commercial software. Measurements of detectors in individual and differential setups will be presented and compared with predictions. I . I N T R O D U C T I O NThe low-frequency (LF) noise at the output of a detector may contribute to increasing system instability, becoming a source of error, for example in the operation of radiometers. Particularly, to establish appropriate switching frequencies in switched radiometer systems, it is especially relevant to know the knee frequency of devices [1]. The presence of a switching frequency in these systems transforms the noise analysis into a cyclostationary problem. Moreover, the system's knee frequency may vary depending on the operation mode of the devices. Rigorous mathematical treatment of several types of deterministic and random signals flowing through a nonlinearity is a classic topic [2], which should be reconsidered as simulation tools evolve and the requirements of systems become stricter. On the other hand, in general, apart from phase noise (PHN) in oscillators, simulation tool studies have paid limited attention to LF noise. Therefore, it is considered of great interest to have an accurate characterization of devices' LF noise together with reliable simulation tools for predicting its conversion to the system output, depending on the device operation regimes.The relevance of the device operation regime is shown in [3], which provides empirical evidence of the shot noise deviation with respect to the conventional model in a large-signal pumped Schottky diode, proposing an alternative model based, not on the mean current of the device, but on the smallsignal resistance, supported by a classic reference [4] and in agreement with the distinction between shot noise with constant and with time-varying rate presented in [5]. In [6], the simulation of cyclostationary noise is treated from a physically-based point of view. In [7], the use of time-domain and transient-envelope tools is proposed for the simulation of switching radiometer systems handling noisy broadband signals. Nevertheless, the frequency domain is usuall...

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Section: B) Pseudo-analytical Resultsmentioning

confidence: 99%

Section: Setup For Stand-alone Diode and Detector Power Spectral Dmentioning

confidence: 99%

Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Gutiérrez

Zeljami

Villa

et al. 2015

Int. J. Microw. Wireless Technol.

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“…Noise spectroscopy has been applied to the study of deep levels in MOSFETs, 3,[30][31][32][33][34] and a recent application based on lowtemperature noise measurements is illustrated in Fig. 6 for a 0.1 m partially depleted ͑PD͒ SOI technology.…”

Section: Lf Noise Sources and Their Analytical Potentialmentioning

confidence: 99%

Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Claeys

Mercha

Simoen

2004

J. Electrochem. Soc.

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This overview focuses on the different types of noise occurring in deep submicrometer silicon metal oxide semiconductor field-effect transistors and their use as an analytical tool. The noise sources comprise white noise, generation-recombination noise, random telegraph signal fluctuations, and 1/f or flicker noise. The fundamental basis of each noise type is briefly described and illustrated by some practical examples. In a second part, the impact of the properties of the silicon substrate (orientation, crystallization technique, silicon-on-insulator, SiGe) on the noise performance is discussed. Finally, the influence on the low-frequency noise behavior of different advanced process modules, such as gate stack, device isolation, silicidation, and gate engineering, is illustrated. © 2004 The Electrochemical Society. All rights reserved.

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“…One technique which appears to be very suitable for this task is Generation-Recombination (GR) noise spectroscopy [1]. Originally, the method has been developed for rather large area semiconductor devices, like, e.g., MOSFETs [1][2][3][4], Charge-Coupled Devices [5] or Junction Field-Effect Transistors [6] to study deep levels in the semiconductor depletion region. It is an alternative to the popular Deep Level Transient Spectroscopy (DLTS) technique [2], the main difference being that the GR centers are studied in dynamic equilibrium, i.e., the noise is due to subsequent capture and emission of free carriers, while in DLTS an emission transient is monitored after trap filling.…”

Section: Introductionmentioning

confidence: 99%

Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

Simoen¹,

Cretu

Wen³

et al. 2015

SSP

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The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deep-level parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude.

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Low-frequency noise in proton damaged LDD MOSFET's

Cited by 8 publications

References 21 publications

Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Noise conversion of Schottky diodes in mm-wave detectors under different nonlinear regimes: modeling and simulation versus measurement

Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

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