Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors

Haddab, Y.; Deveaud, B.; Bühlmann, H.‐J.; Ilegems, M.

doi:10.1063/1.360106

Cited by 12 publications

(6 citation statements)

References 31 publications

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“…Such dependencies are used very often to discuss and analyze the peculiarities of the 1 / f noise in MODFETs. 9,11,15,32 In short channel HEMTs with the high ratio L c / L g , ͑L c is the channel length͒, the spectral noise density S I / I d 2 is often independent or weakly dependent on the gate voltage at voltages close to zero gate bias. 9,15,32 That is because the resistance of the gated part of the channel at V g Ϸ 0͑V gn Ϸ 1͒ is only a small fraction of the total drain to source resistance and noise is mainly determined by the ungated part of the channel and the contacts.…”

Section: -3mentioning

confidence: 99%

“…That is the reason why the low frequency noise in InGaAs-based MODFETs has been extensively studied. [6][7][8][9][10][11][12][13][14] Nevertheless, the understanding of the noise mechanisms is incomplete.…”

Section: Introductionmentioning

confidence: 99%

“…Measurements of the temperature dependence of the GR noise allowed finding the activation energy of traps responsible for the GR noise. 11,12 Gate leakage current was found to contribute to the output low frequency drain current noise in some cases. 10 In certain devices, the gate voltage dependence of the 1 / f noise is well described by the model suggested in Ref.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Levinshteǐn¹,

Rumyantsev²,

Tauk³

et al. 2007

Journal of Applied Physics

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We report on the low frequency ͓1/ f and generation-recombination ͑GR͔͒ noise in InAlAs/InGaAs modulation doped field effect transistors with a 50-nm gate length. The characteristic capture and emission times of the GR noise depended on the gate voltage. Measurements of the noise as a function of the gate voltage showed that the gate leakage current, contacts, and ungated sections of the channel did not contribute to the 1 / f noise. The gate voltage dependence of the 1 / f noise agreed well with the model of number of carriers fluctuations as a source of the 1 / f noise. An effective density of traps responsible for the 1 / f noise was found to be D eff Ϸ 2.7ϫ 10 12 cm −2 eV −1 .

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Section: -3mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Levinshteǐn¹,

Rumyantsev²,

Tauk³

et al. 2007

Journal of Applied Physics

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“…Therefore, LFN in HEMTs is one of the major limitations on the performance of high-frequency analog circuits. 2) Numerous studies [3][4][5][6][7][8][9][10][11][12] on LFN have been reported. In the context of LFN in homogeneous III-V compound semiconductors, Hooge has proposed an empirical relation, 3) in which the spectrum density of the noise [S n ð f Þ] is inversely proportional to the total number of carriers (N) and proportional to the square of current (I) through the sample.…”

Section: Introductionmentioning

confidence: 99%

“…This indicates that these exist some types of noise source. With respect to LFN in HEMTs, some possible noise sources have been suggested: the mobility fluctuation [3][4][5] mentioned above, generation-recombination (g-r) noise arising from deep levels in AlGaAs, 6) multiple g-r noise in the channel, 7) gate leakage current noise, 8) channel roughness and penetration of the electron wave function, 9) leakage current through the semi-insulating substrate 10,13) and surface g-r noise. 11) Furthermore, Nishiyama and Higuchi succeeded in separating LFN into three noise sources that are located in the intrinsic, source and drain regions.…”

Section: Introductionmentioning

confidence: 99%

Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs

Wada¹,

Nakamoto²,

Hamayoshi³

et al. 2005

Jpn. J. Appl. Phys.

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We have investigated the effects of a high-field region on low-frequency noise (LFN) in AlGaAs/InGaAs HEMTs using a two-region model and experiments. The negative cross-correlation between the LFN generated from a low-field region and that from a high-field region is found for the first time. This negative cross-correlation depends on gate and drain voltages, and increases with gate voltage. Due to this negative cross-correlation, the observed LFN is almost constant because the crosscorrelation cancels out the increase in the LFN generated from the low-field region.

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Low frequency noise in GaAs heterodimensional junctionfield effect transistors

Pala¹,

Lu²,

Shur³

2000

Electron. Lett.

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An investigation is presented into the low frequency noise in GaAs heterodimensional junction field effect transistors (HD JFETs) at room and elevated temperatures. The Hooge parameter at zero gate bias was calculated to be 2 × 10 -3 for the devices. The temperature dependence of the noise was used to determine the trap level with an activation energy of 0.7eV.Recently, a new generation of semiconductor devices has emerged. These devices utilise interfaces between semiconductor regions of different dimensions and are called heterodimensional devices [1,2]. One such device is the heterodimensional junction field effect transistor (HD JFET) that utilises a p + / n junction between a three dimensional p + region and two dimensional electron gas of GaAs. Studies revealed that the HD JFET has excellent characteristics at room and elevated temperatures [3,4]. Although these features make the devices very promising for future applications at ultra-high frequencies and in low power electronics, the noise characteristics have not yet been investigated. In this Letter, we present the results of low frequency noise studies for HD JFETs.The noise measurements were performed for an HD JFET having a nominal gate length of 2 µ m and an effective gate width of 1.2 µ m. The fabrication process of the device is described in detail in [5]. The sheet density of carriers in the channel N S was 10 12 cm -2 and the extracted value of the mobility was 4000cm 2 /Vs. The extracted threshold voltage and the saturation voltage for 0.4V gate bias were -0.23 and 0.5V, respectively. The drain leakage current is of the order of 10 -9 A and the on/off drain current ratio is ~10 4 .

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Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors

Cited by 12 publications

References 31 publications

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length

Low-Frequency Noise Generated from High-Field Region in AlGaAs/InGaAs HEMTs

Low frequency noise in GaAs heterodimensional junctionfield effect transistors

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