Low-Frequency Noise of a Ballistic Rectifier

Singh, Arun K.; Kasjoo, Shahrir R.; Song, Aimin

doi:10.1109/tnano.2014.2308593

Cited by 23 publications

(11 citation statements)

References 26 publications

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“…The observation that remains almost the same from 0.1 to 2 μA at 10 Hz in Fig. 3d suggests that the mobility fluctuation attributes to the flicker noise at low frequencies according to Hooge's empirical equation 30 32 . At high frequencies, the flicker noise will eventually become negligible compared with the thermal noise.…”

Section: Resultsmentioning

confidence: 78%

“…Furthermore, the BR has an intrinsic zero threshold, and it hence does not need any biasing circuit that are not only troublesome at very high frequencies, but also may introduce significant parasitic elements. Operating at zero bias also greatly reduces the flicker noise, which often practically limits microwave detection capability of diode detectors 30 . To study the low-frequency noise properties of the graphene BR, we have adopted the cross-correlation technique to minimize the noise from the measurement set-up (measurement set-up is shown in Supplementary Fig.…”

Section: Resultsmentioning

confidence: 99%

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Graphene ballistic nano-rectifier with very high responsivity

et al. 2016

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Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm2 V−1 s−1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW−1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz−1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Graphene ballistic nano-rectifier with very high responsivity

et al. 2016

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“…As shown by the typical carrier trajectories in Figure a and Supporting Information, the carriers are redirected to the same output lead irrespective of which input contact they come from, resulting in a dc output when an ac signal is applied. The four-terminal nature of the device and the orthogonal arrangement of the input channels to the output channels ensure that the input and output contacts are largely decoupled, and the output noise is slightly influenced by the input signal . The BR concept inherently differs from all conventional rectifiers because it neither contains nor relies on any doping junction or barrier structure along the direction of electrical current.…”

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confidence: 99%

“…The four-terminal nature of the device and the orthogonal arrangement of the input channels to the output channels ensure that the input and output contacts are largely decoupled, and the output noise is slightly influenced by the input signal. 26 The BR concept inherently differs from all conventional rectifiers because it neither contains nor relies on any doping junction or barrier structure along the direction of electrical current. As such, the carriers do not need to overcome a built-in electric field to conduct a current, meaning that the device has a zero threshold voltage.…”

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confidence: 99%

Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers

Auton

But

Zhang³

et al. 2017

Nano Lett.

110

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A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as a terahertz (THz) detector. A small-area (<1 μm) local gate is used to adjust the Fermi level in the device to optimize the output while minimizing the impact on the cutoff frequency. The device operates in both n- and p-type transport regimes and shows a peak extrinsic responsivity of 764 V/W and a corresponding noise equivalent power of 34 pW Hz at room temperature with no indications of a cutoff frequency up to 0.45 THz. The device also demonstrates a linear response for more than 3 orders of magnitude of input power due to its zero threshold voltage, quadratic current-voltage characteristics and high saturation current. Finally, the device is used to take an image of an optically opaque object at 0.685 THz, demonstrating potential in both medical and security imaging applications.

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“…where S V (f) is the voltage noise spectral density, a H is the Hooge's constant, V is the applied voltage, N T is the total number of charge carriers that take part in the conduction, 16 and b is the constant with an estimated value of 1 AE 0.001. The noise amplitude is equal to A ¼ a H /N T .…”

Section: Noise Analysis Of the Ftbrmentioning

confidence: 99%