Low-Frequency Noise Properties of GaN Nanowires

Li, L. C.; Huang, Ke; Suen, Y. W.; Hsieh, W. H.; Chen, Chin-Der; Lee, M. W.; Chen, Chia Chun

doi:10.1063/1.2730098

Cited by 3 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be attributed to the existence of a specific kind of traps with a fixed characteristic charging or discharging time. 23) Figure 5 shows the PSD of contact Rc4 at I ¼ 3, 6, and 9 nA. The 1=f noise becomes more prominent as I increases.…”

Section: Resultsmentioning

confidence: 99%

Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Li¹,

Huang

Wei

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We report the properties of low-frequency contact noise of multielectrode GaN nanowire (NW) devices. A two-port cross-spectrum technique is used to discriminate the noise of the ohmic contact from that of the NW section. The diameter of the GaN NW is around 100 nm. The Ti/Al electrodes of the NWs are defined by e-beam lithography. The typical resistance of a NW section with a length of 800nm is about 5.5 k Omega and the two-wire resistance is below 100 k Omega. The results show that the low-frequency excess noise of the GaN NW is much smaller than that of the current-flowing contact, indicating that the contact noise dominates the noise behavior in our GaN NW devices. A careful study of the noise amplitude (A) of the 1/f noise of different types of NW and carbon nanotube devices, both in our work and in the literature, yields an empirical formula for estimating A from the two-wire resistance of the device. (C) 2011 The Japan Society of Applied Physic

show abstract

Section: Resultsmentioning

confidence: 99%

Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Li¹,

Huang

Wei

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

Motayed

Krylyuk

Davydov

2011

Applied Physics Letters

View full text Add to dashboard Cite

We have used low-frequency noise (LFN) spectroscopy to characterize generation-recombination (G-R) centers in silicon nanowires grown using chemical vapor deposition. The LFN spectra showed Lorentzian behavior with well-defined corner-frequency indicative of single G-R center in the bandgap. From the temperature-dependent LFN measurement a single deep level at 0.39 eV from the bandedge is identified, which matches closely with the Au donor level in Si. The trap concentration was estimated at 2.0 × 1012 cm−3 with electron and hole capture cross-sections of 9.5 × 10−17 cm2 and 1.4 × 10−16 cm2, respectively. This study demonstrates the potential of the LFN spectroscopy in characterization of deep-levels in nanowires.

show abstract

Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Huang

Wei

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Low-Frequency Noise Properties of GaN Nanowires

Cited by 3 publications

References 0 publications

Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

Low-Frequency Contact Noise of GaN Nanowire Device Detected by Cross-Spectrum Technique

Contact Info

Product

Resources

About