Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities

et al. 2015

Phys. Status Solidi A

In this work, both time domain random telegraph noise (RTN) and frequency domain Lorentzian spectra due to generation–recombination (GR) centres are studied in ultra‐thin buried oxide (UTBOX) silicon‐on‐insulator (SOI) nMOSFETs. As will be shown, for a Si film‐related RTN, the corner frequency is moderately dependent on the gate voltage, while a strong VGS dependence is found for an oxide RTN. This translates in the time domain in a different behaviour of the capture and the emission time constants and their ratio: for an oxide RTN, an exponential gate voltage dependence is observed for the time constant ratio, from which the trap depth in the oxide can be derived. On the other hand, for a defect in the silicon film, the ratio remains constant around one, indicating that the Fermi level is close to the trap level in that case. Based on this analysis, one can distinguish RTN due to gate oxide traps from RTN due to silicon film defects.

Section: Introductionmentioning

confidence: 99%

Distinction between silicon and oxide traps using single-trap spectroscopy

Wen

et al. 2015

Phys. Status Solidi A

“…5). This has been clearly validated by the presence of RTSs in the same transistors, connected with these film-related defects [7]. It can be demonstrated that the carrier generation by a SRH center is very sensitive to the activation energy, whereby close-to-mid-gap levels are most efficient [5].…”

Section: Lf Noise and Retention In Utbox Soifbrammentioning

confidence: 63%

“…Note, however, that the noise PSD is spread over more than two decades, compared with one decade for the retention time. A detailed analysis of the latter parameter has shown that the dispersion in noise magnitude is due to the presence of excess Lorentzian noise, corresponding with OR centers in the silicon film [6,7]. This is illustrated in Fig.…”

Section: Lf Noise and Retention In Utbox Soifbrammentioning

confidence: 89%

See 1 more Smart Citation

Noise analysis in advanced memory devices

2015 China Semiconductor Technology International Conference

Jurczak

et al. 2015

Self Cite

Low-frequency (LF) analysis is applied to advanced memory devices in order to characterize, quantify and identify defects affecting their performance. In single-transistor (I T) Floating-Body Random Access Memory (FBRAM) on Ultra-thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOl), it is shown that the retention time behavior can be explained by the traps giving rise to Generation-Recombination noise. In conventional DRAM technology, the capacitor leakage is one of the most serious showstoppers for scaling down. The analysis of the lifnoise in the gate leakage current of STO-based DRAM Metal-Insulator-Metal (MIM) capacitors shows a strong impact of the gate stack on the defect density.

“…The RTN origin in UTBOX devices, i.e., the silicon film, front gate oxide or buried oxide, can be identified by measuring the noise spectral density for different bias conditions. Analysis of the noise at one interface can give information on the trap origin, by imposing the accumulation mode at the other interface, thereby screening the influence of the corresponding oxide traps from the other interface [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Study of ΔID/ID of a single charge trap in utbox silicon films

Wen

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

et al. 2014

This paper analyzes the amplitude of Random Telegraph Noise (RTN) caused by a single trap in the silicon film of UTBOX devices by two-dimensional (2-D) numerical simulations. The dependence of the relative RTN amplitude on the bias condition and trap position is simulated, explaining the large variability of the RTN amplitude. The simulated traps close to the source or drain have an asymmetric V D dependence, which is in good agreement with the reported experimental data. This implies that the asymmetry of the V D dependence of switched source and drain can be utilized to identify the lateral trap position. The underlying reasons for the voltage dependence are analyzed and it is shown that the electric field where the trap is located has a reciprocal relationship with the relative RTN amplitude.