Low-frequency noise used as a lifetime test of LEDs

Ursuțiu, Doru; Jones, Brian K.

doi:10.1088/0268-1242/11/8/002

Cited by 50 publications

(26 citation statements)

References 9 publications

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“…[14][15][16] This is not surprising as the low-frequency excess noise of a semiconducting device has been shown to be directly proportional to the defect density in the material. It has been demonstrated that there is a strong correlation between the initial rate of increase in the low-frequency noise level and the lifetime of the device.…”

Section: Introductionmentioning

confidence: 97%

“…It has been demonstrated that there is a strong correlation between the initial rate of increase in the low-frequency noise level and the lifetime of the device. 16 The decrease in the device lifetime is related to the increase in the defect density. 17 It is important to identify relationship between the degradation of the optoelectronic and low-frequency noise properties of the device to further elucidate on the phenomenon.…”

Section: Introductionmentioning

confidence: 99%

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Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Leung

Fong

Chan

et al. 2010

Journal of Applied Physics

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We report investigations on the degradation of GaN-based light-emitting diodes due to high dc current stress by examining two types of devices with the same fabrication procedures except for the growth conditions for the InGaN quantum wells ͑QWs͒. Higher trimethylindium and triethylgallium fluxes are used for type A devices resulting in a threefold increase in the InGaN QWs growth rate compared to type B devices. Detailed structural and optoelectronic properties of the devices are investigated by transmission electron microscopy, atomic force microscopy, thermal imaging, I-V measurements, and the low-frequency noise properties of the devices as a function of the stress time, t S . The experimental data show that the QWs in type B devices are dominated by spiral growth and they have substantially higher strain nonuniformity than type A devices. The highly strained GaN/ InGaN interfaces in device B are also responsible for the faster increase in the defect density due to hot-electron injection. The defects enhance the trap-assisted tunneling in the multiple quantum wells ͑MQWs͒ resulting in the development of hot spots among type B devices after high current stressing of the MQWs. This in turn leads to an increase in the defect generation rate resulting in a thermal run-away condition that ultimately resulted in the failure of the device. The data show that an increase in the growth rate in the InGaN layer led to the domination by the step flow growth mode over the spiral growth mode in the MQWs. This is the main reason for the reduction in the dislocation density in type A devices and hence their increase in device reliability.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Leung

Fong

Chan

et al. 2010

Journal of Applied Physics

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“…It has been shown that experimental facts about noise help us to better understand the correlation between noise in a device and its reliability. Besides, life tests and aging tests have shown that both the initial noise and initial rate of noise increase correlates best with lifetime [6]. However, in most of the presented results there is a lack of a well defined criterion for quality validation of electronic components based on the noise generated by them.…”

Section: Introductionmentioning

confidence: 95%

Noise measurement of optoelectronic coupled devices for reliability screening: Is there an optimal threshold?

Xu¹

2000

AIP Conference Proceedings

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“…The question, in which part of the structure defects appear, how they influence the device operation characteristics and how they behave during device aging, is always actual for any semiconductor structure. At this point, noise investigation gives valuable information and is useful for evaluating semiconductor device quality and predicting lifetime [1,[7][8][9][10][11]. * corresponding author; e-mail: sandra.pralgauskaite@ff.vu.lt…”

Section: Introductionmentioning

confidence: 99%