Low frequency pressure modulation of indium antimonide

Abstract

A lumped parameter resonator capable of generating megapascal pressures at low frequency (kilohertz) is described. Accelerometers are used to determine the applied pressure, and are calibrated with a piezoelectric sample. A laser diagnostic was also developed to measure the pressure in semiconductor samples through the band gap pressure dependence. In addition, the laser diagnostic has been used to measure the attenuation coefficient α of commercially available indium antimonide (InSb) wafers. The resonator and laser diagnostic have been used with InSb samples to verify the pressure response.

Resonant transducers for solid-state plasma density modulation

“…The optical cross section σ t was experimentally determined, as described in Ref. 6, and agrees well with published data.…”

“…The band gap is approxia) hallock@ece.utexas.edu b) mark.a.meier@exxonmobil.com mately linear with the relative volume change for all diamond and zinc-blende semiconductors. 5 For InSb and the crystal orientation we have used, this gives 6 P u P h = 2.959 (5) for the same volume change, where P u is the uniaxial pressure.…”

Diamagnetic current measurements in a solid-state plasma

“…[14][15][16] A laser diagnostic system was developed which allows accurate measurement of the plasma density profile in InSb. A 1-dimensional layered medium model was also developed, which confirmed operation of the transducers and provided additional insight.…”