2011
DOI: 10.1103/physreva.84.043828
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Low-frequency self-pulsing in single-section quantum-dot laser diodes and its relation to optothermal pulsations

Abstract: Self-sustained pulsations in the output of an InAs quantum dot laser diode in the MHz range are reported. The characteristics (shape, range, and frequency) are presented for the free-running laser and when optical feedback in the Littrow configuration is applied. Bistability in the light-current characteristics is observed for operating wavelengths smaller than the gain peak, but it is not present for wavelengths above the gain peak and for the free-running laser, except at elevated temperatures. The temporal … Show more

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Cited by 19 publications
(15 citation statements)
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“…The profile of the pulse consists of a jump up, a slower decay, followed by a drop out that are reminiscent of the experimental time traces observed in Ref. [4]. Our objective is not to simulate the experiments reported in Ref.…”
mentioning
confidence: 98%
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“…The profile of the pulse consists of a jump up, a slower decay, followed by a drop out that are reminiscent of the experimental time traces observed in Ref. [4]. Our objective is not to simulate the experiments reported in Ref.…”
mentioning
confidence: 98%
“…In order to explain the self-pulsations in quantum-dot (QD) lasers, the saturable absorption was assumed to be the result of inhomogeneous broadening of the gain and the existence of several confined QD states [3]. A recent experimental investigation of an InAs QD laser without a saturable absorber reported on large amplitude self-sustained pulsations in the MHz range [4]. The MHz range and the nonmonotonic change of the pulsation frequency with current exclude the passive Q-switching mechanism.…”
mentioning
confidence: 99%
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“…Для реализации режима самопульсаций необходимо по-местить в лазерный резонатор насыщающийся поглотитель [4]. В на-стоящее время опубликовано значительное число экспериментальных и теоретических работ [5][6][7], в которых обсуждаются условия достижения режима самопульсаций как в полосковых торцевых полупроводниковых лазерах, так и в вертикально-излучающих лазерах (ВИЛ), где для ограничения тока инжекции используется ионная имплантация или се-лективное окисление, что обеспечивает формирование насыщающегося поглотителя в непрокачиваемой части активной области. Альтерна-тивным подходом к генерации оптических импульсов пикосекундной длительности является использование режима переключения усиления, который реализуется при накачке полупроводниковых лазеров наносе-кундными импульсами тока [8][9][10].…”
Section: поступило в редакцию 31 июля 2017 гunclassified