Low Hysteresis MoS<sub>2</sub>-FET Enabled by CVD-Grown h-BN Encapsulation

Piacentini, Agata; Schneider, Daniel; Otto, Martin; Canto, B.; Wang, Zhenyu; Radenović, Aleksandra; Kis, András; Lemme, Max C.

doi:10.1109/drc52342.2021.9467236

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“…Commercially available hexagonal boron nitride (h-BN) layers and different MoS2 layers were transferred from their respective growth substrates onto these prepatterned PI on silicon substrates with a wet transfer technique. The MoS2 was then covered with a second layer of h-BN in order to improve the quality of the interface [41,42] . The channel was patterned by reactive ion etching (RIE) and the electrical contacts to the h-BN/MoS2/h-BN stack were realized by DC sputtering of a 50 nm thick nickel layer.…”

Section: Mos2 Fet Fabrication and Characterizationmentioning

confidence: 99%

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

et al. 2022

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We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS2 field effect transistors (FETs). The MoS2 FETs are fabricated using a wafer-scale process on 8 µm thick Polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS2 sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS2, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.

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Section: Mos2 Fet Fabrication and Characterizationmentioning

confidence: 99%

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

et al. 2022

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Low Hysteresis MoS₂-FET Enabled by CVD-Grown h-BN Encapsulation

Cited by 1 publication

References 8 publications

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

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Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation

Cited by 1 publication

References 8 publications

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

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Product

Resources

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Low Hysteresis MoS₂-FET Enabled by CVD-Grown h-BN Encapsulation

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates

Zero‐Bias Power‐Detector Circuits based on MoS₂ Field‐Effect Transistors on Wafer‐Scale Flexible Substrates