Low injection anode as positive spiral improvement for 650V RC-IGBT

Kamibaba, Ryu; Kaneda, M.; Takahashi, Tetsuo; Furukawa, Akihiko

doi:10.1109/ispsd.2018.8393627

Cited by 7 publications

(4 citation statements)

References 4 publications

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“…When the IGBT is turned on again, the freewheeling diode enters the reverse recovery process, the excess carriers in the RC-IGBT body are extracted, the electrons flow out through the N + short circuit region, and the holes flow away from the P base region. Figure 8 shows the switching characteristics of the LE-RC-IGBT and conventional RC-IGBT [29,30]. The red and green curves represent the voltage and current values of the LE-RC-IGBT during the switching process, while the Con-RC-IGBT is blue and black curves.…”

Section: Fig 2comparison Of Forward Conduction Characteristics Betwee...mentioning

confidence: 99%

Research on characteristics of RC-IGBT with low switching energy consumption

Lima

Xie

Zhang

et al. 2022

IEICE Electron. Express

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This paper presents a 1200V-class reverse conducting insulated gate bipolar transistor (RC-IGBT) with low switching energy consumption (LE-RC-IGBT). Its structure was designed in accordance with the latest enhanced trench and field stop technology while incorporating an anti-parallel Free Wheeling Diode (FWD) between the adjacent FS-IGBT cells. With the Emitter Shorted Diode (ESD) technology employed in the design of the FWD structure, the FWD and FS-IGBT can be made simultaneously. By using the same trench etching technique of the gate process, oxide trench was formed on the back side of the device to increase the short-circuit resistance between the N + Collector and the P + Collector on the back of the RC-IGBT. The voltage snapback phenomenon of the conventional RC-IGBT was completely eliminated. The electrical characteristics of the RC-IGBT were investigated by using Sentaurus-TCAD. Simulation results show that the switching energy consumption of the proposed LE-RC-IGBT is reduced by approximately 50%compared with the conventional one.

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Section: Fig 2comparison Of Forward Conduction Characteristics Betwee...mentioning

confidence: 99%

Research on characteristics of RC-IGBT with low switching energy consumption

Lima

Xie

Zhang

et al. 2022

IEICE Electron. Express

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“…Assuming higher frequency applications than the relatively low‐frequency cases mentioned above as DIPIPM TM , to break through a fundamental difficulty with improving the diode reverse recovery characteristics, the diode's hole injection efficiency is selectively reduced by a structural approach with minimum sacrifices in wafer process steps (Fig. 20) [65].…”

Section: High Power Density Solutionmentioning

confidence: 99%

“…RC-IGBT's backside pattern layout[51] Top views of IGBT module packages[51] Example of improved diode structure for RC-IGBT[65] (a) Conventional, (b) Low hole injection type…”

mentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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“…Super-junction (SJ) technology has been proven owing the ability of alleviating the snapback effect in RC-SJBTs [5] and reduce switching loss of IGBTs [6,7], the reduced switching loss is also beneficial for reducing heat source, but it has not been applied into RC-IGBT designs. Local life time control [8,9] and Schottky controlled injection (SC) [10][11][12] are usually adopted to improve reverse recovery characteristics of FWD in RC-IGBTs, but they also deteriorate on-state characteristics of IGBT. Another way is to introduce auxiliary gate to control hole injection efficiency in sequence, which alleviate carriers in IGBT mode and reduce carriers in FWD mode, but that requires additional gate control signal and current direction detector.…”

Section: Introductionmentioning

confidence: 99%

A novel 650 V snapback-free PMOS-RC-SJBT with low switching and reverse recovery losses

Yang,

Li,

et al. 2023

Semicond. Sci. Technol.

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A novel 650 V Snapback-free Reverse-conducting Super-junction (SJ) insulated gate bipolar transistor (RC-SJBT) with low switching and reverse recovery loss is proposed and investigated in paper. In where, SJ pillar acts as the drift region, meanwhile PMOS and Schottky are combined on the cathode side. Under the action of SJ pillar, the snapback is effectively suppressed and V o n − E o f f trade-off of IGBT is also improved. The PMOS and Schottky combined structure enhances on-state carriers of IGBT meanwhile reduces hole injection efficiency during reverse recovery of freewheel diode, thus the reverse recovery switching loss ( E r e c ) of PMOS-RC-SJBT is reduced without sacrificing IGBT’s performance. Investigated by the TCAD tools, the total switching loss of PMOS-RC-SJBT is reduced by 51.2% from Con. RC-IGBT and 40.6% than the latest commercial RC-IGBT IKWH30N65WR6 of Infineon. Besides that, t s c is increased by 35.3% than RC-SJBT. Additionally, the snapback-free P-collector width is reduced from 340 µm of Con.RC-IGBT to 40 µm of PMOS-RC-SJBT, where the current uniformity is substantially improved.

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Low injection anode as positive spiral improvement for 650V RC-IGBT

Cited by 7 publications

References 4 publications

Research on characteristics of RC-IGBT with low switching energy consumption

Research on characteristics of RC-IGBT with low switching energy consumption

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

A novel 650 V snapback-free PMOS-RC-SJBT with low switching and reverse recovery losses

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