Low-k dielectrics for trench isolation in nanoscaled complementary metal oxide semiconductor imagers

Irrera, Fernanda; Puzzilli, Giuseppina; Ricci, Laura; Russo, Felice; Stirpe, F.

doi:10.1116/1.3074346

Cited by 2 publications

(3 citation statements)

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“…In this paper, we specifically seek to illustrate that high-k gate oxides and low-k interlay dielectrics (ILDs) represent just a small fraction of the numerous dielectric materials utilized in nanoelectronic products and that research into these "other" dielectrics remains a substantive and active field. [15][16][17][18][19][20][21][22] We further illustrate that, thanks to the numerous delays in extreme ultra-violet (EUV) lithography, 23,24 diverse new applications for dielectric materials have emerged as pitch-division multi-patterning technologies [25][26][27] have now come into widespread use. In addition, the numerous new devices being considered to extend and go beyond the end of the scaling roadmap for the currently dominant complementary metal oxide semiconductor (CMOS) device technology have created a bountiful new array of research opportunities for traditional and more complex dielectric materials.…”

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confidence: 84%

“…Beyond high-k gate dielectrics and low-k ILDs, ultra-large scale integrated (ULSI) products contain numerous other dielectric materials that, while not previously receiving as much attention or publicity, are becoming increasingly more important in terms of achieving further dimensional scaling and performance gains. [18][19][20][21]197 In the following next section, we take a look at these frequently overlooked or forgotten about dielectrics and examine the unique permittivity scaling challenges they present and future research needed.…”

Section: What Is Left For High-k and Low-k Dielectrics?mentioning

confidence: 99%

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Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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confidence: 84%

Section: What Is Left For High-k and Low-k Dielectrics?mentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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“…78,79 It is also important to note, that low-k dielectric materials are of interest for reducing parasitic capacitances associated with spacer and trench isolation in various 2D and 3D transistor devices. 8,80,81 For these applications, thermal and chemical stability during transistor fabrication represents an added challenge for candidate low-k materials.…”

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confidence: 99%

Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies

et al. 2013

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Recent discussions concerning the continuation of Moore's law have focused on announcements by several major corporations to transition from traditional 2D planar to new 3D multi-gate field effect transistor devices. However, the growth and progression of the semiconductor microelectronics industry over the previous 4 decades has been largely driven by combined advances in new materials, lithography, and materials related process technologies. Looking forward, it is therefore anticipated that new materials and materials technologies will continue to play a significant role in both the pursuit of Moore's law and the evolution of the industry. In this research update, we discuss and illustrate some of the required and anticipated materials innovations that could potentially lead to the continuation of Moore's law for another decade (or more). We focus primarily on the innovations needed to achieve single digit nanometer technologies and illustrate how at these dimensions not only new materials but new metrologies and computational modeling will be needed.

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Low-k dielectrics for trench isolation in nanoscaled complementary metal oxide semiconductor imagers

Cited by 2 publications

References 7 publications

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies

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