2023
DOI: 10.1063/5.0135550
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Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

Abstract: Electrical characterizations of AlGaN/GaN heterojunctions isolated by N implantation at elevated temperatures were investigated. Three-terminal measurements were carried out to characterize leakage paths, and crystal lattice damage due to implantation was monitored by high-resolution x-ray diffraction. Compared with room temperature implantation, the current leakage was reduced by ∼103 times by the implantation at 300 °C. The low leakage was attributed to low acceptor-like energy levels due to low crystal latt… Show more

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