Low Leakage Current Polysilicon Oxide Grown by Two-Step Oxidation

Mikata, Y.; Mori, S.; Shinada, K.; Uchihashi, Takashi

doi:10.1109/irps.1985.362071

Cited by 7 publications

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“…These structures also have reliability and performance requirements based on the capacitor oxide integrity. Factors that can contribute to interpoly oxide failure include metal contamination and incorporation of poor quality oxide [3][4][5].…”

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confidence: 99%

The Influence of Complimentary Contamination on Oxide Integrity

Naughton,

Towner

2006

Meet. Abstr.

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The Influence of Complimentary Contamination on Oxide Integrity

Naughton,

Towner

2006

Meet. Abstr.

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“…The selection of process conditions to optimize gate oxide quality and reliability often results in suboptimum properties for the simultaneously grown poly-ox (4)(5)(6). The poly-ox thickness, poly/poly-ox interface roughness, and poly-ox electrical properties depend on several process variables including poly deposition conditions, dopant concentration, and oxidation conditions of poly (1,(7)(8)(9)(10)(11). In the semiconductor manufacturing environment, poly oxidation processes are usually monitored with monocrystalline silicon test wafers.…”

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A Special Case of Using Ellipsometry to Measure the Thickness of Oxide on Polysilicon: II . Application

Vasquez

Tompkins

Gregory

1990

J. Electrochem. Soc.

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Experimental results presented in this work verify the application of a visible light single wavelength ellipsometric method for measuring the thickness of oxide on polysilicon (poly-ox). The method requires a special test structure with a thin oxide under the poly. These results confirm that the uncertainty of the poly-ox thickness determination is approximated by the thickness of the oxide under the polysilicon. Test structures were generated with 100A oxides under 5000A polysilicon. With the proper choice of the values of A ~ and ~~ for the film-free surface, the poly-ox thickness determined by ellipsometry using the single-film approximation agreed within 100A of the thickness measured by Auger electron spectroscopy. In the semiconductor manufacturing environment, poly oxidation processes are usually monitored with singlecrystal test wafers. Since the differential oxide thickness on poly relative to single-crystal depends on the several process conditions (poly deposition, doping, annealing, oxidation), the single-crystal monitors do not accurately represent the results on the polysilicon. The new method permits measurement of poly-ox thickness directly after oxidation and therefore accounts for the interaction of the previous process conditions with the conditions of oxidation that is so important to the resultant poly-ox thickness.

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