Low leakage current resistive memory based on Bi_1.10 (Fe_0.95Mn_0.05) O₃ films

Abstract

The bipolar resistance switching characteristics were confirmed in a resistive memory device with an Ag/Bi 1.10 (Fe 0.95 Mn 0.05 )O 3 /SRO/Pt/TiO 2 /SiO 2 /Si(100) structure, in which the limiting current was 1 mA. In comparison with BiFeO 3 -based memory, it was found that doping with Mn effectively reduced the leakage current of the device and thus improved the device endurance (200 cycles-1000 cycles). The high-temperature retention test demonstrated that the device could be used for 10 years without losing data. Through x-ray photoelectron spectroscopy analysis of Bi 1.10 (Fe 0.95 Mn 0.05 )O 3 thin film elements, it was inferred that both the oxygen vacancies, which are produced by high-temperature conditional growth, and the doped Mn change the Fe valence, thereby reducing the leakage current. Finally, through fitting analysis of the I-V diagram and temperature tests in the low-resistance state, we inferred that the behavior of the resistance conversion is due to the formation of Ag conductive filaments.

Significant Enhancement of the Visible Light Photocatalytic Properties in 3D BiFeO3/Graphene Composites

“…However, these semiconductor materials have low photocatalytic activity under visible light irradiation due to their wide band gaps. In recent years, ferroelectric materials have been given great attention in various fields [18,19,20,21,22]. BiFeO 3 (BFO) as a ferroelectric material has become a hot material in the field of photocatalysis because of its narrow band gap [23,24,25,26,27] and photovoltaic effect, which extend the light response range to the visible region and greatly improve the utilization rate of solar energy [28,29].…”

Composition control and introduction of an Fe2O3seed layer in metalorganic chemical vapor deposition of epitaxial BiFeO3thin films

“…[4][5][6] However, a large leakage due to oxygen vacancies and/or off-stoichiometry makes it difficult to integrate BFO thin films into actual devices. BFO thin films have been prepared by various thin film deposition techniques, such as sputtering, 1,6,[7][8][9][10][11][12] pulsed laser deposition, [13][14][15][16][17][18][19][20][21] metalorganic chemical vapor deposition (MOCVD), 22,23) chemical solution deposition, 24,25) and so on. [26][27][28][29][30] Among these deposition methods, MOCVD is one of the most suitable for preparing BFO thin films with low leakage because its capability for deposition under high oxidizing gas pressure and precise composition control can suppress the introduction of oxygen vacancies into the films and off-stoichiometry.…”

Low Dielectric Loss and Multiferroic Properties in Ferroelectric/Mutiferroic/Ferroelectric Sandwich Structured Thin Films

“…Due to a large spontaneous polarization, a high Curie temperature (T C = 1103 K), and a high Neel temperature (T N = 643 K), BFO has fascinated researchers since it was first synthesized. However, BFO has remained unsuitable, due to its high leakage current and large dielectric loss [4][5][6]. Magnetic properties can be adjusted by using Nd 3+ ions instead of larger Bi 3+ ions in the BFO composition [7], and in order to improve leakage current, Ni, Ti, Sm, Mn, Zn, and Ho doped in BFO thin films [8][9][10][11][12][13][14], to improve ferroelectric properties and ferroelectric properties, but there was limited action in reducing leakage current.…”