Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate

InP/InGaAs Hot Electron Transistors with Insulated Gate

“…Hot electrons were generated using a resonant tunneling barrier structure as an electronic launcher. A voltage gain of 25 and a current gain of 25 1) were confirmed from observed I-V characteristics. The obtained current density was about 90 kA/cm 2 , 2) which, although not small, was not sufficient for high-speed operation.…”

“…Thus, elimination of the doped layer from the propagation region in hot electron transistors provides the possibility of high-speed operation. [1][2][3][4] By a Monte Carlo simulation, the estimated speed of hot electrons was over 7 Â 10 7 cm/s and the estimated cutoff frequency was over 1 THz when the current density was over 700 kA/cm 2 . 4) In previous study, 1,2) we fabricated hot electron transistors without a doped layer in the propagation region by fabricating a 25-nm-wide emitter and Schottky gate electrodes located at both sides of an emitter mesa.…”

“…[1][2][3][4] By a Monte Carlo simulation, the estimated speed of hot electrons was over 7 Â 10 7 cm/s and the estimated cutoff frequency was over 1 THz when the current density was over 700 kA/cm 2 . 4) In previous study, 1,2) we fabricated hot electron transistors without a doped layer in the propagation region by fabricating a 25-nm-wide emitter and Schottky gate electrodes located at both sides of an emitter mesa. Hot electrons were generated using a resonant tunneling barrier structure as an electronic launcher.…”