Low-loss and high index-contrast tantalum pentoxide microring resonators and grating couplers on silicon substrates

Rabiei, Payam; Rao, Ashutosh; Chiles, Jeff; Ma, Jichi; Fathpour, Sasan

doi:10.1364/ol.39.005379

Cited by 36 publications

(16 citation statements)

References 12 publications

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“…Waveguides with propagation loss of 4.9 dB/cm, microring resonators with loaded quality factor of 6 × 10 4 and grating couplers for convenient in-and out-coupling are demonstrated. Figure 7 summarizes some of the demonstrated waveguide properties [132]. These demonstrations suggest that Ta 2 O 5 -on-Si is potentially a viable platform for high-performance nonlinear integrated photonic applications.…”

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 94%

“…Therefore, only small values of net gain in Raman amplifiers has been observed [115]. Several researchers have totally moved to other nonlinear materials such as hydrogenated amorphous silicon (a-Si:H) [116][117][118], silicon nitride (SiN) [119][120][121], Hydex TM [122,123], chalcogenide glass [124][125][126], and tantalum [131,132]. Table 1 summarizes n 2 and β TPA in all the materials discussed in the previous paragraph in comparison to SiO 2 , as a benchmark.…”

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

“…Also, compact (submicron) Ta 2 O 5 waveguide are not easily feasible based on such conventional schemes. Based on our proposed scheme, called selective oxidation of the refractory metal (SORM) Tantalum (Ta), we have recently demonstrated the first high-index contrast Ta 2 O 5 submicron waveguides and microring resonators on Si substrates (see Figure 7) [131,132].…”

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

“…[132] starts with sputtering Ta, rather than Ta 2 O 5 , and making stripes out of the refractory metal by electron-beam lithography and chlorine-based selective etching. The etching recipe is highly selective on Ta over the photoresist, allowing smooth sidewalls and hence low propagation loss.…”

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

“…Coincidently, the index of Ta 2 O 5 matches that of LiNbO 3 (∼2.1). Hence, the same SORM technology described for attaining Ta 2 O 5 waveguides on SiO 2 -coated Si [131,132] can be applied on thin films of LiNbO 3 bonded to Si and readily achieve waveguides. Figure 8A and B show a surface-scanning micrograph (SEM) of a fabricated device as well as the device schematic and calculated optical mode [151].…”

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

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Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 94%

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Section: Second-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

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Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

Hsieh

Lin

et al. 2016

Annalen der Physik

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A tantalum pentoxide-based (Ta 2 O 5 -based) micro-ring alloptical modulator was fabricated. The refractive index inside the micro-ring cavity was modified using the Kerr effect by injecting a pumped pulse. The transmittance of the ring resonator was controlled to achieve all-optical modulation at the wavelength of the injected probe. When 12 GHz pulses with a peak power of 1.2 W were coupled in the ring cavity, the transmission spectrum of the Ta 2 O 5 resonator was redshifted by 0.04 nm because of the Kerr effect. The relationship between the modulation depth and gap of the Ta 2 O 5 directional coupler is discussed. An optimized gap of 1100 nm was obtained, and a maximum buildup factor of 11.7 with 84% modulation depth was achieved. The nonlinear refractive index of Ta 2 O 5 at 1.55 μm was estimated as 3.4 × 10 −14 cm 2 /W based on the Kerr effect, which is almost an order of magnitude higher than that of Si 3 N 4 . All results indicate that Ta 2 O 5 has potential for use in nonlinear waveguide applications with modulation speeds as high as tens of GHz.

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Second‐Harmonic Generation in Integrated Photonics on Silicon

Rao

Fathpour

2017

Physica Status Solidi (a)

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This paper presents the recent progress on integrated second-order nonlinear waveguides on silicon substrates for second-harmonic generation. In particular, demonstrations of thin-film lithium niobate, III-V compound semiconductor and dielectric waveguides integrated on silicon substrates are reviewed. For completeness, the fundamentals of the nonlinear optical processes involved are briefly introduced. Methods demonstrated for phase matching, e.g., periodic poling and mode-shape modulation, in the compact integrated devices are discussed. Finally, an outlook for how integrated photonics may benefit from the progress in this field is provided.

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Low-loss and high index-contrast tantalum pentoxide microring resonators and grating couplers on silicon substrates

Cited by 36 publications

References 12 publications

Emerging heterogeneous integrated photonic platforms on silicon

Emerging heterogeneous integrated photonic platforms on silicon

Tens of GHz Tantalum pentoxide‐based micro‐ring all‐optical modulator for Si photonics

Second‐Harmonic Generation in Integrated Photonics on Silicon

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