“…To realize the full potential of plasmonics, a renewed emphasis has been placed on the development of new materials. − Unlike traditional noble-metal-based plasmonic materials that have an invariable free-electron density, carrier concentration in doped semiconductors can be controlled synthetically to activate plasmonic behavior in the visible and the infrared regions of the electromagnetic spectrum. − Over the past decade, LSPR at visible and NIR wavelengths has been demonstrated for a variety of semiconductor NCs, ranging from metal chalcogenides, − phosphides, , nitrides to doped metal-oxides. − LSPR in the mid-infrared (MIR) range (3–10 μm), on the other hand, provides a unique set of potential applications distinct from shorter wavelengths. , For instance, the abundance of molecular vibrational modes makes MIR a spectral region appealing for sensing applications, which could benefit from enhanced light–matter interactions made possible by leveraging tightly confined LSPR modes . Moreover, MIR plasmonic NCs could enable performance enhancement of MIR optoelectronic devices such as lasers and photodetectors. , Despite these promises, broadband tunable MIR plasmonic NCs derived from a single host material remains very limited. − …”