Low loss waveguide integration within a thin-SOI CMOS foundry

Integration of silicon photonics in a bulk CMOS memory flow

“…Existing implants, dopant activation, and device patterning processes were used. However, a zero process change SiP project [4] was not viable.…”

Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 μm technology

“…The main difference of using a monolithic or heterogeneous substrate in the optical device's fabrication is that a monolithic substrate means a less complex fabrication process and opens the possibility to achieve a high packing density at lower cost. In the recent years, fabrication of optical devices in Silicon monolithic substrate have gained relevance by using well-known manufacturing technologies such as bulkcomplementary metal oxide semiconductor (CMOS) and silicon-on-insulator (SOI-CMOS) [9], [10]. Silicon has some limitations for the fabrication of optical devices [11], [12] but it is still a viable option considering the plethora of techniques and processes developed in the microelectronics industry that could be used for fabrication of optical devices in many applications [10], [13], [14].…”

“…The contribution of this paper is the report of the electrical characterization of an optical device fabricated in the standard CMOS 0.35 µm technology provided by the austria micro systems (AMS) [9], [15], [16]. The optical device has three components: a source light, that is a microlamp emulating an incandescent lamp, coupled to an optical waveguide, to guide light to device's ending that is an embedded detector, based on a PN photodiode, further description of the optical device is in [17], [18].…”

“…The optical device has three components: a source light, that is a microlamp emulating an incandescent lamp, coupled to an optical waveguide, to guide light to device's ending that is an embedded detector, based on a PN photodiode, further description of the optical device is in [17], [18]. This paper is structured as follows: section 2, explain the concepts behind the elements of the optical device, its layout and parts and its fabrication in AMS 0.35 µm [9], [15], [16]. Section 3 describes the optical device's characterization.…”