Low-loss waveguides in ultrafast laser-deposited As_2S_3 chalcogenide films

Zakery, A.; Ruan, Yinlan; Rode, Andrei; Samoć, Marek; Luther‐Davies, Barry

doi:10.1364/josab.20.001844

Cited by 76 publications

(55 citation statements)

References 22 publications

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“…Above this temperature, films rapidly reach saturation at higher refractive index approaching the accepted bulk value. These saturated refractive indices between 2.3 and 2.4 agree well with indices reported for As 2 S 3 films deposited using other techniques, such as thermal evaporation (n = 2.2-2.4), PECVD (n = 2.3), and pulsed laser deposition (n = 2.4) [5,17,25]. FTIR is used to verify the presence of residual solvent in the films and the effects of film annealing on optical loss in the infrared range.…”

Section: Resultssupporting

confidence: 87%

Influence of annealing conditions on the optical and structural properties of spin-coated As_2S_3 chalcogenide glass thin films

Song¹,

Dua²,

Arnold³

2010

Opt. Express

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Spin-coating of chalcogenide glass is a low-cost, scalable method to create optical grade thin films, which are ideal for visible and infrared applications. In this paper, we study the influence of annealing on optical parameters of As 2 S 3 films by examining UV-visible and infrared spectroscopy and correlating the results to changes in the physical properties associated with solvent removal. Evaporation of excess solvent results in a more highly coordinated, denser glass network with higher index and lower absorption. Depending on the annealing temperature and time, index values ranging from n = 2.1 to the bulk value (n = 2.4) can be obtained, enabling a pathway to materials optimization. 275-284 (1987). 19. S. Shtutina, M. Klebanov, S. R. V. Lyubin, and V. Volterra, "Photoinduced phenomena in spin-coated vitreous As2S3 and AsSe films," Thin Solid Films 261(1-2), 263-265 (1995). 20. J. Tauc, "Absorption edge and internal electric fields in amorphous semiconductors," Mater. Res. Bull. 5(8), 721-729 (1970). 21. R. Swanepoel, "Determination of the thickness and optical constans of amorphous silicon," J. Phys. E 16(12), 1214-1222 (1983). 22. E. Marquez, J. Ramirez-Malo, P. Villarest, R. Jimenez-Garay, P. J. S. Ewen, and A. E. Owen, "Calculation of the thickness and optical constants of amorphous arsenic sulfide films from their transmission spectra," J. Phys. D Appl. Phys. 25(3), 535-541 (1992). 23. S. Wemple, and M. DiDomenico, "Behavior of electronic dielectric constant in covalent and ionic materials,"Phys. Rev. B 3(4), 1338-1351 (1971). 24. S. Wemple, "Refractive-index behavior of amorphous semiconductors and glasses," Phys. Rev. B 7(8), 3767-3777 (1973).

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Section: Resultssupporting

confidence: 87%

Influence of annealing conditions on the optical and structural properties of spin-coated As_2S_3 chalcogenide glass thin films

Song¹,

Dua²,

Arnold³

2010

Opt. Express

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“…In ultra-fast PLD process (see, e.g. [20,71]), the laser pulse energy is lowered and the frequency of pulses is increased in order to decrease the presence of particulates in deposited films. Usually, the PLD is performed using pulses of energy from $0.1 J to several joules from UV excimer lasers with repetition rates up to 100 Hz.…”

Section: Deposition Problemsmentioning

confidence: 99%

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Frumar

Frumarová

Němec

et al. 2006

Journal of Non-Crystalline Solids

135

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“…For example, As 2 S 3 and As 2 Se 3 have bandgap energies around 2.26 eV [150,151] and 1.77 eV [152], and they are transparent up to 12 and 15 µm [153], respectively. Although in this paper chalcogenide glasses are not considered a material for the core of a waveguide, one may use them for waveguide cladding and slot layer [53,58].…”

Section: Methodsmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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Low-loss waveguides in ultrafast laser-deposited As_2S_3 chalcogenide films

Cited by 76 publications

References 22 publications

Influence of annealing conditions on the optical and structural properties of spin-coated As_2S_3 chalcogenide glass thin films

Influence of annealing conditions on the optical and structural properties of spin-coated As_2S_3 chalcogenide glass thin films

Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

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