Low Noise Amplifier for 2.45 GHz Frequency Band at 0.18 μm CMOS Technology for IEEE Standard 802.11 b/g WLAN

Abstract

Abstract-This paper presents the design of low noise amp lifier (LNA) at 2.45 GHz and integrated at 0.18 µm RF CM OS process technology. This type of LNA at 2.45 GHz is use in the Bluetooth receiver. The proposed method is useful to optimize noise performance and power gain while maintaining good input and output matching. The amplifier is designed to be used as first stage of a receiver for wireless communicat ion. The main aim o f designer is to achieve low noise figure with improved gain with the help of CMOS technology by using single stage n-MOS amp lifier. The simulation results show a forward gain of 14.0 d B, a noise-figure of 0.5 dB and stability factor is appro ximate unity, in wh ich the circuit operates at 14.2 mA drain current with supply voltage of 3.5 V and biasing voltage of 1.5 V.Index Terms-Advanced design system, Low noise amplifier, Input and output matching, RFIC, VLSI