2018 Asia-Pacific Microwave Conference (APMC) 2018
DOI: 10.23919/apmc.2018.8617582
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Low-Noise Amplifiers for W-Band and D-Band Passive Imaging Systems in SiGe BiCMOS Technology

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Cited by 13 publications
(1 citation statement)
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“…To provide a perspective of the technology of W band LNAs at room temperature, Table 1 lists a comparison of the LNAs employed in this setup with other references from different technologies. It should be mentioned that SiGe technologies [17] could provide lower consumption than GaAs based metamorphic or InP HEMT, but with slightly higher noise figures. Even GaN technology [18] can provide similar noise figures, but with higher consumption, as could be expected from a technology conceived to handle higher power levels than the typical for LNAs.…”
Section: Low Noise Amplifiers In W Bandmentioning
confidence: 99%
“…To provide a perspective of the technology of W band LNAs at room temperature, Table 1 lists a comparison of the LNAs employed in this setup with other references from different technologies. It should be mentioned that SiGe technologies [17] could provide lower consumption than GaAs based metamorphic or InP HEMT, but with slightly higher noise figures. Even GaN technology [18] can provide similar noise figures, but with higher consumption, as could be expected from a technology conceived to handle higher power levels than the typical for LNAs.…”
Section: Low Noise Amplifiers In W Bandmentioning
confidence: 99%