Low-Noise and High-Linearity Wideband CMOS Receiver Front-End Stacked With Glass Integrated Passive Devices

Ye, Rong-Fu; Horng, Tzyy‐Sheng; Wu, Jiming

doi:10.1109/tmtt.2014.2315170

Cited by 8 publications

(3 citation statements)

References 30 publications

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“…Numerous papers have proposed methods for ameliorating the noise of wideband LNAs. A flipped complementary metal-oxidesemiconductor (CMOS) LNA packaged on a GIPD substrate with high-Q GIPD inductors was proposed and produced 0.4 dB decreases in the NF [11]. Inductively coupled plasma (ICP) deeptrench technology was utilised to improve the quality factor of onchip inductors; however, the extra CMOS process steps complicated the circuit implementation [12].…”

Section: Noise-reduction Lnamentioning

confidence: 99%

Compact composite noise‐reduction LNA for UWB WPAN and WBAN applications

Lin

Liang

Tarng

et al. 2018

IET Microwaves, Antennas & Propagation

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An ultra‐wideband (UWB) low‐noise amplifier (LNA) implemented using 180 nm complementary metal–oxide–semiconductor technology is presented for wireless personal area network (WPAN) and wireless body area network (WBAN). Increasing the resistance of the substrate resistor RB reduces the noise factor. When additional substrate resistors and a composite feedback topology are employed, the proposed LNA can achieve both a 1.4 dB reduction of the noise figure (NF) and a 4 dB enhancement in power gain (PG). Over the operating frequency range from 3.1 to 4.8 GHz, the LNA achieves a maximum PG of 14.5 dB, a minimum NF of 1.5 dB, and an input return loss of <10 dB. The measured current consumption is 3 mA with a 1.5 V supply voltage. The active chip area is 0.008 mm2. The proposed 3.1–4.8 GHz LNA has a superior NF, smaller active area, and the lowest dc power consumption compared with devices reported in the literature.

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Section: Noise-reduction Lnamentioning

confidence: 99%

Compact composite noise‐reduction LNA for UWB WPAN and WBAN applications

Lin

Liang

Tarng

et al. 2018

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

show abstract

“…Several papers have proposed methods for ameliorating the noise of LNAs. A flipped CMOS glass-integrated-passive-device (GIPD) package [14] and inductively coupled plasma (ICP) deep-trench technology [15] were utilized to improve the quality factor of off-chip and on-chip inductors. However, the extra processes of CMOS GIPD flip-chips and ICP created excessive costs of package and production.…”

Section: Introductionmentioning

confidence: 99%

Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

et al. 2021

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This paper presents a triple-band low-noise amplifier (LNA) fabricated using a 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses a double-peak load network with a switched component to accomplish the triple-band operation. Moreover, noise reduction using a substrate resistor to ameliorate the noise performance is presented. Noise reduction of 1.5 dB can be achieved at 2.5 GHz without additional dc power and extra manufacturing costs. An input matching technique is realized simultaneously using a gyrator-based feedback topology. The triple-band LNA can be realized by using a dual-band input network with a switched matching mechanism. The target frequencies of the triple-band LNA are 2.3–2.7 GHz, 3.4–3.8 GHz, and 5.1–5.9 GHz, covering the operating frequency bands of time-division long-term evolution (TD-LTE), mid-band Fifth-generation (5G), LTE-unlicensed (LTE-U) band, and Wireless LAN (WLAN) technology. The measured power gains and noise figures at 2.5, 3.5, and 5.2 GHz are 12.3, 15.3, and 13.1 dB and 2.3, 2.2, and 2.6 dB, respectively.

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“…However, this method leads to higher power consumption. On the other hand, passive on-chip baluns have been extensively used due to its superior common mode rejection ratio (CMRR) while consuming no power [2], [3].…”

Section: Introductionmentioning

confidence: 99%

Method to improve the conversion gain flatness of transformer-coupled mixers

Saavedra

2016

2016 IEEE Radio and Wireless Symposium (RWS)

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A 4-10 GHz, on-chip balun based current commutating mixer is proposed. Tunable resistive feedback is used at the transconductance stage for wideband response, and interlaced stacked transformer is adopted for good balance of the balun. Measurement results show that a conversion gain of 13.5 dB, an IIP3 of 4 dBm and a noise figure of 14 dB are achieved with 5.6 mW power consumption under 1.2 V supply. The simulated amplitude and phase imbalance is within 0.9 dB and ±2 • over the band.

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Low-Noise and High-Linearity Wideband CMOS Receiver Front-End Stacked With Glass Integrated Passive Devices

Cited by 8 publications

References 30 publications

Compact composite noise‐reduction LNA for UWB WPAN and WBAN applications

Compact composite noise‐reduction LNA for UWB WPAN and WBAN applications

Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications

Method to improve the conversion gain flatness of transformer-coupled mixers

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