Low noise FET design for wireless communications

Franca-Neto, L.M.; Mao, Eric; Harris, Jason S.

doi:10.1109/iedm.1997.650387

Cited by 7 publications

(1 citation statement)

References 2 publications

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“…The 1-D simulation conveys simple and insightful results at reasonable computational cost; unfortunately, its accuracy is limited. Recently an alternative technique, using a 1-D Boltzmann transport equation, has been proposed to improve model accuracy for short channel MOSFETs [10]. Nevertheless, the primary weakness involves incorporation of two-dimensional (2-D) dependencies.…”

Section: Introductionmentioning

confidence: 99%

An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

Goo¹,

Choi²,

Danneville

et al. 2000

IEEE Trans. Electron Devices

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Based on an active transmission line concept and twodimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters ( , , and ) for the drain noise and induced gate noise are calculated. Validity and error analysis for the simulation are discussed by comparing the simulation results with theoretical results as well as measured data.

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Section: Introductionmentioning

confidence: 99%