Low noise homodyne detection of terahertz waves by zero-biased InP/InGaAs Fermi-level managed barrier diode

Abstract

Homodyne detection of terahertz (THz) waves by a zero-biased Fermi-level managed barrier (FMB) diode was investigated for the first time to reveal its fundamental characteristics in the mixing detection. The lowest noise equivalent power of 1.6 × 10 −17 W/ ffiffiffiffiffiffi Hz p was obtained at 300 GHz with a very low local oscillator power of 5 × 10 −7 W.

Optical heterodyne AND operation as emulation of physical layer security at wireless communication

“…The configuration reduces a possibility for third parties of detecting the real data from each wireless signal. This system is enabled by THz coherent detection technologies [22,23,24,25] and our novel high-frequency wave beam steering via an UTC-PD/antenna array [19,20,21]. In this letter, as an emulation of the proposed wireless heterodyne AND operation system, we construct an optical heterodyne AND operation system and experimentally demonstrate the feasibility of the secured communication mechanism.…”

Low‐noise heterodyne detection of terahertz waves at room temperature using zero‐biased Fermi‐level managed barrier diode

“…As a solution, the use of a low-barrier-height diode has been attempted with several devices such as the InGaAs SBD [4] and ErAs/InAlGaAs hetero-barrier diode [6]. We also developed a novel hetero-barrier rectifier called the Fermi-level managed barrier (FMB) diode [7][8][9], which has a very low barrier height. In the FMB diode, the barrier height at the InP/InGaAs hetero-interface is adjusted by controlling the Fermi level in the anode layer so that a very low barrier height below 100 mV can be easily attained.…”