Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

Wang, S.; Hurst, J.B.; Sidhu, R.; Sun, Xiaoli; Zheng, Xiaoguang; Holmes, A. L.; Huntington, Andrew S.; Coldren, L.A.; Campbell, Joe C.

doi:10.1109/lpt.2002.804651

Cited by 44 publications

(20 citation statements)

References 23 publications

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“…Their result showed that the extra energy was relatively small and had no effect on enhancement of impact ionization. This observation was later been further agreed by Wang et al [7,8] who conducted the excess noise measurements of submicron III-V heterojunction APD (HAPD). A structure of two-layers multiplication region with optimum width of energy build-up layer of Al 0.6 Ga 0.4 As material was proposed to achieve minimum noise figure.…”

Section: Introductionsupporting

confidence: 66%

Dead space effect on excess noise factor in double heterojunction avalanche photodiodes

et al. 2009

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A double heterojunction avalanche photodiode (DHAPD) model using Monte Carlo (MC) method is applied to study the effect of dead space on excess noise factor. The mean multiplication gain and excess noise factor involving electron and hole impact ionizations are simulated in our work. The higher order impact ionization occurs in three multiplication layers is considered in the model. The avalanche characteristics of DHAPD are obtained by incorporating the dead-space, d ij , hole to electron coefficients ratio, k j and heterointerface probability, p im . Among these factors, the dead space effect plays an important role in reducing the excess noise factor in thin DHAPD. The dead space effect is also known in minimizing noise in homojunction APD when the device length is getting smaller. The distributions of carriers in multiplication region are demonstrated to explain the effect of dead space in DHAPD. Meanwhile, it is also shown that the hole to electron ionization coefficients ratio, k 2 = 0.1 in the second layer gives the small excess noise factor in designing the DHAPD.

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Section: Introductionsupporting

confidence: 66%

Dead space effect on excess noise factor in double heterojunction avalanche photodiodes

et al. 2009

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“…However, absent the longer impact ionization chains, the APD's mean gain is also reduced. A change in semiconductor alloy composition inside the APD junction will result in a change of both the impact ionization threshold energy and the impact ionization rate, narrowing the gain distribution by making impact ionization much more likely in some locations and much less likely in others [13], [29]. However, like APDs that employ dead-space effects, the spatial localization of impact ionization reduces the number of possible ionization chains and can result in reduced mean avalanche gain.…”

Section: Reducing Apd Multiplication Noisementioning

confidence: 99%

“…The pre-factors, A, for InGaAs were reduced by a factor of 2.85 from those published by Pearsall to fit the Monte Carlo model's calculation of excess noise factor to the measurements for the I 2 E structure reported by Wang et al [13]. This was done because the authors of this paper are unaware of any impact-ionization rate models published in the literature for the quaternary alloy Al 0.335 Ga 0.140 In 0.525 As used in the SCM APD multiplier.…”

Section: ) Monte Carlo Models Of Scm Apdmentioning

confidence: 99%

Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

Williams

Compton

Ramírez

et al. 2013

IEEE J. Electron Devices Soc.

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We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950-1650 nm wavelength sensing applications. The APD is grown by molecular beam epitaxy on InP substrates from lattice-matched InGaAs and InAlAs alloys. Avalanche multiplication inside the APD occurs in a series of asymmetric gain stages whose layer ordering acts to enhance the rate of electron-initiated impact ionization and to suppress the rate of hole-initiated ionization when operated at low gain. The multiplication stages are cascaded in series, interposed with carrier relaxation layers in which the electric field is low, preventing avalanche feedback between stages. These measures result in much lower excess multiplication noise and stable linear-mode operation at much higher avalanche gain than is characteristic of APDs fabricated from the same semiconductor alloys in bulk. The noise suppression mechanism is analyzed by simulations of impact ionization spatial distribution and gain statistics, and measurements on APDs implementing the design are presented. The devices employing this design are demonstrated to operate at linear-mode gain in excess of 6 000 without avalanche breakdown. Excess noise characterized by an effective impact ionization rate ratio below 0.04 were measured at gains over 1 000.

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“…We have also demonstrated individual devices which we believe to be the largest of their type yet reported (1 mm), and impact-ionization-engineered (I 2 E) multiplication layers with extremely low excess noise [2,3]. Several growth attempts were necessary in each case to produce wafers suitable for the studies in question because of variations in device performance that were traced to run-to-run variations in material quality.…”

Section: Introductionmentioning

confidence: 99%

Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP

Huntington

Wang

Zheng

et al. 2004

Journal of Crystal Growth

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Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

Cited by 44 publications

References 23 publications

Dead space effect on excess noise factor in double heterojunction avalanche photodiodes

Dead space effect on excess noise factor in double heterojunction avalanche photodiodes

Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

Relationship of growth mode to surface morphology and dark current in InAlAs/InGaAs avalanche photodiodes grown by MBE on InP

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