Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

Whelan, C.S.; Hoke, W.F.; McTaggart, R.A.; Lardizabal, M.; Lyman, P. S.; Marsh, P.F.; Kazior, T.E.

doi:10.1109/55.817435

Cited by 51 publications

(10 citation statements)

References 8 publications

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“…An In 0.8 GaP/In 0.4 AlAs/In 0.35 GaAs composite channel with indium content of 45% was grown on a metamorphic buffer of 1‐μm‐thick linearly graded InAlAs layer. The fabricated 130‐nm mHEMTs exhibited good electrical performances such as the maximum transconductance g m of 720 mS/mm, cut‐off frequency f t of 170 GHz, and maximum oscillation frequency f max of 380 GHz [13]. The off‐state breakdown voltage between drain and source was measured to be 6 V, which is relatively low for high power amplifiers.…”

Section: Device Characteristicsmentioning

confidence: 99%

K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors

Park¹,

Kim²,

Koh³

et al. 2012

Micro & Optical Tech Letters

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A broadband watt‐level power amplifier in a metamorphic high electron mobility transistor (mHEMT) technology is presented at K‐band. The quadruple‐stacked transistor is used to overcome the low breakdown voltage limit of mHEMTs and achieve watt‐level output powers. The fabricated power amplifier using 130‐nm mHEMTs shows an output power of 1.3 W at 18 GHz with a 3‐dB power bandwidth of 58%. To the best of our knowledge, this is the first report of watt‐level single‐chip power amplifiers in mHEMT technology. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2624–2626, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27140

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Section: Device Characteristicsmentioning

confidence: 99%

K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors

Park¹,

Kim²,

Koh³

et al. 2012

Micro & Optical Tech Letters

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“…However, they have some critical drawbacks such as mechanical fragility of the wafer and higher material cost. In recent decades, active research has been performed on the GaAs-based metamorphic HEMTs (MHEMTs) to address the needs for both high millimeter-wave performance and low cost [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

High LO-to-RF isolation 94GHz coplanar monolithic down-converter for FMCW radar sensor applications

Moon

Jun

et al. 2010

Current Applied Physics

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“…The GaAs MHEMT has an advantage in that it can incorporate a high indium content channel, with indium composition ranging from 30% to 100%, which results in higher f max and f T and lower noise than GaAs PHEMT, and is comparable with InP devices. Therefore, the GaAs MHEMT provides a lowcost alternative to the high performing but more expensive InP HEMT [2]. It also has the property of inherent low operating voltage which can reduce dc power consumption by high indium contents [3], [4].…”

Section: Introductionmentioning

confidence: 99%

An Ultra-Low-Power MMIC Amplifier Using 50-nm <formula formulatype="inline"> <tex Notation="TeX">$\delta$ </tex> </formula>-Doped <formula formulatype="inline"> <tex Notation="TeX">$\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex> </formula> Metamorphic HEMT

Hwang

Lok

Chong

et al. 2010

IEEE Electron Device Lett.

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An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process. A double δ-doped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As MHEMT technology with optimal doping profiles was used to achieve both ultra-low dc power consumption and good dynamic-range performance. The single-stage amplifier operates in the 24-GHz band and shows typical gain of 7.2 dB, ±0.5 dB bandwidth of 1.2 GHz, return losses better than 9 dB, and input IP 3 (IIP 3) of +3 dBm while consuming only 0.9 mW of dc power. These experimental results demonstrate the outstanding potential of MHEMT technology for ultra-low-power applications such as wireless sensor networks. Index Terms-Coplanar waveguide, metamorphic highelectron-mobility transistor (MHEMT), monolithic microwave integrated circuit (MMIC), ultra-low power consumption, δ-doped In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As.

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Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

Cited by 51 publications

References 8 publications

K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors

K‐band watt‐level mHEMT power amplifier using quadruple‐stacked transistors

High LO-to-RF isolation 94GHz coplanar monolithic down-converter for FMCW radar sensor applications

An Ultra-Low-Power MMIC Amplifier Using 50-nm <formula formulatype="inline"> <tex Notation="TeX">$\delta$ </tex> </formula>-Doped <formula formulatype="inline"> <tex Notation="TeX">$\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex> </formula> Metamorphic HEMT

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