2003
DOI: 10.1063/1.1532539
|View full text |Cite
|
Sign up to set email alerts
|

Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1 K

Abstract: Low noise three-stage pseudomorphic high electron mobility field-effect transistors amplifier were designed for the temperature range below 1 K. A minimum noise temperature TN≈100 mK was measured at an ambient temperature of about 380 mK at frequencies between 1 and 4 MHz for a source resistance of 10 kΩ. The gain of the amplifier was 50 at a power consumption of about 200 μW. The noise parameters of the amplifier are stable to within 30%, for a power consumption in the range of 100–300 μW. Minimum voltage spe… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
31
0

Year Published

2004
2004
2023
2023

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 54 publications
(31 citation statements)
references
References 3 publications
0
31
0
Order By: Relevance
“…To help answer these questions, measurements of this and other materials, including single-crystal diamond, at ultralow temperatures ͑10 mK-1 K͒ would be very illuminating. In addition, by combining the timedomain technique demonstrated here with very-highsensitivity readout amplifiers, 17 it may also be possible to observe discrete dissipation events. This would offer further insight into the mesoscopic behavior of these nanomechanical devices.…”
Section: J E Butlermentioning
confidence: 99%
“…To help answer these questions, measurements of this and other materials, including single-crystal diamond, at ultralow temperatures ͑10 mK-1 K͒ would be very illuminating. In addition, by combining the timedomain technique demonstrated here with very-highsensitivity readout amplifiers, 17 it may also be possible to observe discrete dissipation events. This would offer further insight into the mesoscopic behavior of these nanomechanical devices.…”
Section: J E Butlermentioning
confidence: 99%
“…This work was motivated by microwave quantum engineering, 1-3 including quantum information processing devices. 4,5 The sensitivity of cryogenic semiconductor amplifiers with reasonable power consumption in both the MHz 6 and GHz (commercially available) range are all currently above the quantum limit. At very low temperatures it is quite natural to use the parametric effect for amplification which adds no additional noise to the signal.…”
mentioning
confidence: 99%
“…It was slightly modified from the version in ref. [13] in order to decrease its back-action on the qubit. The input-voltage noise was < 0.6 nV/ √ Hz in the range 1-25 MHz.…”
mentioning
confidence: 99%