2019
DOI: 10.1007/s11141-020-10001-7
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Low-Noise Sis Receivers for New Radio-Astronomy Projects

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Cited by 13 publications
(7 citation statements)
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“…These data were Fourier-transformed into a mixer response on the frequency. The experimental data demonstrate a good agreement with the results of numerical simulations [48,49].…”
Section: -275 Ghz Sis-mixer Measurementssupporting
confidence: 80%
See 2 more Smart Citations
“…These data were Fourier-transformed into a mixer response on the frequency. The experimental data demonstrate a good agreement with the results of numerical simulations [48,49].…”
Section: -275 Ghz Sis-mixer Measurementssupporting
confidence: 80%
“…To make a wideband receiver for the 790-950 GHz frequency range for CHAMP+, we used twin SIS junctions [46,47] (each with an area of 0.5 µm 2 , see Figure 8), coupled by a waveguide probe to the E-field of a rectangular waveguide of 300 × 75 µm. The SIS mixer [48,49] was based on high critical current density Nb/AlN/NbN tunnel junctions included in the NbTiN-Al microstrip line [39]. The microstrip electrodes (320 nm thick bottom NbTiN electrode and a 500 nm thick top electrode made of Al) were separated by a 250 nm SiO 2 insulator.…”
Section: Mixer and Mixer Block Designsmentioning
confidence: 99%
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“…It is also necessary to compensate for the significant capacitance of the SIS junction (C ≈ 0.085 pFμm 2 ) in order to achieve a low noise temperature. As a result, the impedance of the structure is reduced to a few ohms, and it is necessary to coordinate the final impedance of the SIS junction at a high frequency with the impedance of the waveguide (about 400 Ω), which was done by using a planar structure consisting of segments of coplanar and microstrip lines of Nb/SiO 2 /Nb [99]. The receiving element was made on a quartz substrate with a thickness of 125 μm.…”
Section: Low-noise 211-275 Ghz Band Sis Mixer For Radio Astronomymentioning
confidence: 99%
“…The SIS junction on silicon or quartz substrate was formed by etching a three-layer Nb-AlN-NbN structure through a resist mask formed using EBL. After fabrication of the tunnel junction using plasma chemical etching, anodizing was carried out, and then an insulation layer of SiO 2 was applied [13]. In the final stages, the counter NbN electrode and Au contact pads were formed.…”
Section: Introductionmentioning
confidence: 99%