Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

Dowling, Karen M.; Liu, Tanya; Alpert, Hannah S.; Chapin, Caitlin A.; Eisner, Savannah R.; Yalamarthy, Ananth Saran; Satterthwaite, Peter F.; Köck, Helmut; Ausserlechner, Udo; Asheghi, Mehdi; Goodson, Kenneth E.; Senesky, Debbie G.

doi:10.1109/jmems.2020.3013187

Cited by 9 publications

(5 citation statements)

References 32 publications

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“…It can be seen clearly that the AlGaN/GaN heterojunction horizontal Hall sensor produced in this work can achieve the highest current-related magnetic sensitivity of 94.6 V A −1 T −1 , corresponding to the voltage-related magnetic sensitivity of 0.038 T −1 at 300 K. In addition, the sensitivity is basically stable in the range of 0.1-1.0 mA. Compared with the previously reported data on the sensitivity of GaN-based Hall sensors (60-90 V A −1 T −1 ) [11,[25][26][27], the fabricated sensor here has a significantly improved performance owing to the optimised buffer layer structure and heterojunction growth process. Meanwhile, the optimised photolithography and etching processes are employed to reduce the roughness of the mesa sidewall, which is beneficial for the promotion of the device characteristics.…”

Section: Hall Voltage and Sensitivitymentioning

confidence: 58%

“…The third-generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have been proven to be promising candidates for the preparation of high temperature Hall sensors owing to their good chemical stability, wide bandgap (>3.0 eV) and excellent thermal stability [10,11]. The two-dimensional electron gas (2DEG) that is more easily formed naturally at the interface of GaN-based heterojunction is of considerable interest for high sensitivity Hall sensors.…”

Section: Introductionmentioning

confidence: 99%

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AlGaN/GaN magnetic sensors featuring heterojunction 2DEG channel

Zhang

Huang

et al. 2021

Meas. Sci. Technol.

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Magnetic sensors based on the principle of Hall effect are widely used in various applications for detection and control of displacement, speed, angle, and rotation speed. Nowadays, the conventional Hall sensors are made of the narrow bandgap semiconductors. The typical ones are silicon (Si), indium antimonide (InSb), and gallium arsenide (GaAs). With the rapid increase in the need for high-temperature magnetic detections especially in the space exploration and thermonuclear power stations, they cannot meet the requirement of operation at high temperature due to the limitation of their natural characteristics such as low carrier mobility or small bandgap. In this work, the Hall sensors based on the third-generation semiconductor gallium nitride (GaN) were demonstrated by employing both the simulation and device fabrication schemes. The developed AlGaN/GaN heterojunction Hall sensors benefited from the presence of two-dimensional electron gas (2DEG) are small in size, and have an improved magnetic sensitivity and stability at high temperature. They exhibit a large current-related magnetic sensitivity up to 94.6 V A −1 T −1 and a low temperature coefficient less than 745 ppm K −1 , which is obviously improved compared with those in the currently commercialised semiconductor Hall sensors. Moreover, the Hall sensors developed in this work can be widely used in various harsh environments with high temperature (>573 K) and intense radiation in future.

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Section: Hall Voltage and Sensitivitymentioning

confidence: 58%

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN magnetic sensors featuring heterojunction 2DEG channel

Zhang

Huang

et al. 2021

Meas. Sci. Technol.

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“…With respect to a Hall sensor realized in silicon technology, the GaNbased Hall sensor could operate at higher temperatures and extreme conditions. Moreover, it is not affected by the junction field effect [16], leading to a potentially low residual offset after the application of the spinning-current technique (SCT).…”

Section: A Technology and Devicesmentioning

confidence: 99%

A Comparative Study on Hall Plate Topologies in p-GaN Technology

Crescentini,

Marchesi,

Gibiino

et al. 2023

IEEE Sens. Lett.

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GaN power transistors are being increasingly used in high-power and high-frequency electronic systems due to their high breakdown field, high carrier density, and good thermal conductivity. Despite these advantages, system durability of GaN-based power systems is hindered by the necessity to work at variable operating conditions. The necessary realtime monitoring of the load current is normally implemented by using external shunt resistors, yet the implementation of GaN-based isolated current sensor would be beneficial to the final power system in terms of space occupation as well as cost. This work describes the implementation of two Hall-effect devices in p-GaN technology, which can potentially be used as integrated current sensors in GaN monolithic implementation. These devices are experimentally characterized and compared in terms of sensitivity, offset, and input resistance. Some non-ideality effects are also outlined, identifying future research directions.

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“…Despite a number of limitations including low sensitivity, limited BW, high intrinsic offset, sensitivity to external magnetic fields, and temperature dispersion of the parameters, their compact nature, low cost, low heat dissipation, high DR, good linearity, and the ability to measure DC currents, make HECS well suited for modern power applications. Moreover, the typical limitations of HECS can be mitigated by exploiting specific materials, devices, and tailored circuit configurations [31]- [33].…”

Section: B Overview Of Current Sensing Technologiesmentioning

confidence: 99%