Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

Furukawa, Akihiko; Kinouchi, Shin‐ichi; Nakatake, Hiroshi; Ebiike, Yuji; Kagawa, Yusuke; Miura, Naruhisa; Nakao, Yukiyasu; Imaizumi, Mitsuru; Sumitani, Hiroaki; Oomori, Tatsuo

doi:10.1109/ispsd.2011.5890847

Cited by 15 publications

(3 citation statements)

References 6 publications

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“…The fundamental limits for the drift region resistance of unipolar devices fabricated in SiC and GaN are shown by solid lines, with GaN shown as a range based on the literature and our observations. Published results from vertical SiC power devices show that commercial SiC devices are already approaching the theoretical limit for this material system [1][2][3][4]. Published results from lateral (horizontal) GaN power devices fabricated on sapphire, SiC, or silicon substrates, on the other hand are far from the fundamental GaN limit.…”

Section: Introductionmentioning

confidence: 99%

Very high performance GaN-on-GaN diodes

Kizilyalli

Edwards

Bour

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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Vertical diodes have been fabricated on low defect density bulk GaN substrates. The devices demonstrate performance near theoretical limits for onstate resistance at a given rated breakdown voltage, based on GaN material properties. Breakdown voltage up to 3.7 kV has been measured. Measurements reveal robust avalanche breakdown, critical in an inductive circuit environment. Measurement of switching transients (5-25A) indicates the lack of minority carrier storage and low capacitances resulting in very low switching losses for the devices. IntroductionHigh-efficiency power semiconductor devices are one of the key elements required for improving the efficiency of power electronic systems. For the last three decades, silicon power devices (MOSFETS, IGBTs, and diodes) have dominated the power device market. During this time there have been tremendous improvements in silicon power device performance. However, these devices are now approaching the physical limits of silicon. Alternative materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power devices that can far exceed the performance of silicon-based devices. SiC diodes have already been commercialized and they are increasing market share in applications that demand high efficiency. There is great interest in developing GaN-based power devices because the fundamental material based FOM of GaN is significantly better than SiC and Si. Robust, reliable GaN devices will allow continued improvement in the efficiency of power electronics systems.

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Section: Introductionmentioning

confidence: 99%

Very high performance GaN-on-GaN diodes

Kizilyalli

Edwards

Bour

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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show abstract

“…Improvements from wafer thinning and drift region doping are expected to bring future devices close to the GaN BFOM limit. Published results from vertical SiC power devices indicate that SiC devices are already approaching the theoretical limit for ECS Transactions, 58 (4) 295-298 (2013) this material system and GaN is so far the only path forward to an improved power switch [2][3][4][5].…”

Section: Vertical Jfet Device Structure -Measurement Results and Perf...mentioning

confidence: 99%

1000V Vertical JFET Using Bulk GaN

Diduck¹,

Nie²,

Alvarez³

et al. 2013

ECS Trans.

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Bulk GaN substrates with low defect density are now commercially available. This material enables the fabrication of vertical GaN devices with high breakdown voltage, and excellent electrical performance and power device figure of merit. In this paper, we present a 1000V Vertical JFET that has a positive threshold of 1V. The normally-off FET integrates a hetero-junction in the design to improve the transconductance and enable efficient switching operation into the 10s of MHz.

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“…SiC-MOSFETs are attractive power switches for low loss and miniaturized power electronics systems. R&D on SiC-MOSFETs has been extensively conducted to obtain higher performances suitable for power applications [1][2][3][4]. In previous papers, we reported high threshold voltage (V th ) 600 V class SiC-MOSFETs are fabricated by utilizing a re-oxidation technique for gate oxides [5,6].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure

Ebiike

Tanioka

Furuhashi

et al. 2016

MSF

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High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET has exhibited a high threshold voltage of more than 4 V and a low specific on resistance of 5.2 mΩ·cm2 at 25 °C. The MOSFET has also exhibited a sufficient blocking characteristic at VG of 0 V at 150 °C. High speed switching with low switching losses has been demonstrated successfully using the MOSFET at 150 °C.

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Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

Cited by 15 publications

References 6 publications

Very high performance GaN-on-GaN diodes

Very high performance GaN-on-GaN diodes

1000V Vertical JFET Using Bulk GaN

Characteristics of High-Threshold-Voltage Low-Loss 4H-SiC MOSFETs with Improved MOS Cell Structure

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