Low on-resistance trench power MOSFETs design

Chien, Feng-Tso; Liao, Chien-Nan; Wang, C.-L.; Chiu, Hsien‐Chin; Tsai, Yao‐Tsung

doi:10.1049/el:20083212

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2010

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“…MOSFETs are known to have lower on-state resistances (R DSON ) than vertical DMOS devices because higher channel densities can be achieved [19][20][21][22][23][24]. However, gate oxide layers thermally grown along the trench walls increase the susceptibility of the gate dielectric in trench MOSFETs to HCI since there is more exposure to the channel current compared with the gate dielectrics in vertical DMOS devices [1].…”

Section: Introductionmentioning

confidence: 99%