2019
DOI: 10.1063/1.5090220
|View full text |Cite
|
Sign up to set email alerts
|

Low optical turn-on voltage in solution processed hybrid light emitting transistor

Abstract: HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des labora… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
10
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 11 publications
(10 citation statements)
references
References 23 publications
0
10
0
Order By: Relevance
“…The C8‐BTBT as the hole transport molecular facilitated the efficiency of charge separation, holes transport, and opposite charges recombination. [ 264 ]…”
Section: Btbt Derivatives‐based Devicesmentioning
confidence: 99%
See 2 more Smart Citations
“…The C8‐BTBT as the hole transport molecular facilitated the efficiency of charge separation, holes transport, and opposite charges recombination. [ 264 ]…”
Section: Btbt Derivatives‐based Devicesmentioning
confidence: 99%
“…Reproduced with permission. [ 264 ] Copyright 2019, AIP Publishing. c) Schematic representation of trilayer OLET device.…”
Section: Btbt Derivatives‐based Devicesmentioning
confidence: 99%
See 1 more Smart Citation
“…However, the electronic transport performance is typically low. Thus, devices based on n‐type metal oxide semiconductor channel layers (hybrid NP‐LETs) and perovskites usually have higher mobility than devices based on organic semiconductor channel layers, but the optoelectronic performance is modest, [ 98,99,101,102 ] which indicates that the performance of those hybrid NP‐LETs have a huge room for improvement by optimizing carrier inject efficiency, carrier balance and/or introducing high‐efficiency light emitters. Regarding V‐LETs, the key advantages are the low operating voltages (typically ≤ 15 V) and uniform surface emission (Table 3).…”
Section: Conclusion and Prospectivementioning
confidence: 99%
“…Remarkably, Von(I) and light turn on voltage (Von(L)) almost overlap for all the devices, which is a strong contrast to the solution processed hybrid LETs. 34,35 The hole transport layer (C10-DNTT) is the same for all the control, TPBi and BCP devices. In principle they should have similar hole mobilities.…”
mentioning
confidence: 99%