Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.; Angel, K. T. T.; Wang, Teng; Teo, Kenneth B. K.; Chua, Daniel H. C.; Liu, J.; Yurgens, A.

doi:10.1109/tnano.2011.2160729

Cited by 60 publications

(38 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These films are an example of extreme evaporation and vacancies formation in the copper thin film. Sun et al [21] reported graphene growth on 300 nm thick copper thin films using a process with low partial pressure of methane gas. The results of this growth showed continuous graphene with electrical properties comparable to that of graphene grown on copper foils but with a small D peak in the Raman spectra which indicates the presence of defects in the carbon lattice of the graphene.…”

Section: Introductionmentioning

confidence: 99%

Growth of monolayer graphene on nanoscale copper-nickel alloy thin films

Cho

Gorman

et al. 2017

Carbon

View full text Add to dashboard Cite

Growth of high quality and monolayer graphene on copper thin films on silicon wafers is a promising approach to massive and direct graphene device fabrication in spite of the presence of potential dewetting issues in the copper film during graphene growth. Current work demonstrates roles of a nickel adhesion coupled with the copper film resulting in mitigation of dewetting problem as well as uniform monolayer graphene growth over 97 % coverage on films. The feasibility of monolayer graphene growth on Cu-Ni alloy films as thin as 150 nm in total is also demonstrated. During the graphene growth on Cu-Ni films, the nickel adhesion layer uniformly diffuses into the copper thin film resulting in a Cu-Ni alloy, helping to promote graphene nucleation and large area surface coverage. Furthermore, it was found that the use of extremely thin metal catalyst films also constraint the total amount of carbon that can be absorbed into the film during growth, which helps to eliminate adlayer formation and promote monolayer growth regardless of alloying content, thus improving the monolayer fraction of graphene coverage on the thinner films. These results suggest a path forward for the large scale integration of high quality, monolayer graphene into nanoelectronic and nanomechanical devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Growth of monolayer graphene on nanoscale copper-nickel alloy thin films

Cho

Gorman

et al. 2017

Carbon

View full text Add to dashboard Cite

show abstract

“…Despite the high nucleation density induced polycrystalline nature, the graphene shows good optical and electrical properties. 9,17,18 The transparency of three layer graphene is approximately the same as 240 nm ITO in visible light region. 9 The sheet resistances R s of the mono-and tri-layer graphene are $3000 X/ٗ and $1000 X/ٗ, respectively.…”

mentioning

confidence: 97%

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition

Xie

et al. 2013

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…Consequently, graphene grows rapidly at a very low hydrocarbon partial pressure. 16 Without using metals, which we refer to as "noncatalytic graphene CVD", 10,26 the deposition requires a much higher methane concentration (∼200 vs. ∼0.01 mbar) and longer growth time (30 vs. 5 min). 9,16 The graphene thin-film formation on nonmetallic substrates appears to be different from the mechanism common to e.g.…”

mentioning

confidence: 99%

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Sun

Cole

Lindvall

et al. 2012

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

A noncatalytic chemical vapor deposition mechanism is proposed, where high precursor concentration, long deposition time, high temperature, and flat substrate are needed to grow large-area nanocrystalline graphene using hydrocarbon pyrolysis. The graphene is scalable, uniform, and with controlled thickness. It can be deposited on virtually any nonmetallic substrate that withstands ∼1000 o C. For typical examples, graphene grown directly on quartz and sapphire shows transmittance and conductivity similar to exfoliated or metalcatalyzed graphene, as evidenced by transmission spectroscopy and transport measurements. Raman spectroscopy confirms the sp 2 -C structure. The model and results demonstrate a promising transfer-free technique for transparent electrode production.Graphene, a monolayer of sp 2 carbon atoms, has received much attention. The use of graphene in transparent electronics is one of its most promising applications. 1 Apart from its high transparency/conductivity, the flexibility and ease of integration on a variety of substrates are obvious advantages. 30-inch graphene has been demonstrated by virtue of the recent advances in chemical vapor deposition (CVD), 2 which is compatible with the existing semiconductor technology. 3 Nevertheless, the necessity of etching the metal catalyst and transfer of graphene to foreign substrates hampers wide industrialization. Thus, efforts are put into the metal-free growth of graphene on materials including SiO 2 , 4-6 Al 2 O 3 , 7 MgO, 8 etc. To date, however, the graphitization process on dielectrics is poorly understood while the experiments are largely experience based. Recently, we have shown that large-area uniform graphene can be grown on virtually any hightemperature substrates, on Si 3 N 4 or HfO 2 , for instance. 9 In this letter, we provide a broader and deeper insight, discussing in detail the growth mechanism of graphene directly on insulators. As an example, we show our results on graphene on quartz and sapphire, hinting at the future prospects of the transfer-free graphene for transparent electrodes.Bulk graphite is usually made at >3000 o C and catalysis is needed to lower the temperature. 10 However, nanoscale graphene flakes form without any catalysts at merely ∼1000 o C. For example, carbon black which is produced massively by natural gas pyrolysis 11-14 is nothing else but chaotically connected graphene flakes. 11 Although widely used in industry, this process has so far been overlooked for making large-area graphene. Here, we show that macroscopically amorphous carbon black can be turned into textured graphene thin films when a) Electronic mail: jiesu@chalmers.se. the carbon precursor concentration and growth temperature are high, also requiring a relatively long deposition time and flat substrate. Fig. 1(a) illustrates the CVD reactor used in this work. The middle region is heated to 1000 o C while the left and right sides are <600 o C. There is no material deposition in the right zone because of the reduced CH 4 decomposition efficiency at lo...

show abstract

Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper

Cited by 60 publications

References 26 publications

Growth of monolayer graphene on nanoscale copper-nickel alloy thin films

Growth of monolayer graphene on nanoscale copper-nickel alloy thin films

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition

Noncatalytic chemical vapor deposition of graphene on high-temperature substrates for transparent electrodes

Contact Info

Product

Resources

About