Low Phase Noise Direct-Modulation Optoelectronic Oscillator

Sinquin, Brian; Romanelli, Marco; Bouhier, Steve; Frein, Ludovic; Vallet, Marc; Alouini, Mehdi

doi:10.1109/jlt.2021.3111703

Cited by 13 publications

(2 citation statements)

References 16 publications

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“…Ultra-stable and high-spectral purity microwave signals are of strategic interest in a relevant number of applications and technologies, including Doppler and chirp radars for which the echo signal should not be obscured by the oscillator noise sidebands [1], communications with reduced bit error rate and enhanced security [2], the development of state-of-the-art microwave atomic clocks [3], high-precision synchronization systems [4], signal measurement instrumentation [5] or radio-astronomy using very-long base line intererometry (VLBI) [6]. The majority of currently-deployed low noise microwave sources rely on room-temperature frequency-multiplied quartz crystal oscillators [7], sapphire oscillators [8,9], or optoelectronic [10,11] and Brillouin-based oscillators [12]. These systems exhibit excellent phase noise for offset frequencies higher than 1 kHz but are not adapted to support stringent close-tocarrier noise specifications required for quantum sensing [13], Doppler radar systems with slow-moving objects or high density communications.…”

Section: Introductionmentioning

confidence: 99%

Phase noise mitigation of the microwave-to-photonic conversion process using feedback on the laser current

Teyssieux¹,

Boudot²,

Fluhr³

2022

J. Opt. Soc. Am. B

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The generation and transfer of ultra-stable microwave signals are of paramount importance in numerous applications spanning from radar systems to communications and metrology. We demonstrate residual phase noise mitigation at 10 GHz of a directly modulated laser system through active control of the laser bias current. The latter is tuned to a finely selected point, where the current-to-phase dependence, measured at several microwave power and frequency values, is maximized. A residual phase noise of − 113 d B r a d 2 / H z at 1 Hz offset frequency from a 10 GHz carrier, with a fractional frequency stability of 1.2 × 10 − 16 at 1 s and below 10 − 19 at 10 5 s , is measured. These performances are compliant with the transfer of the most stable microwave signals available to date, obtained with cryogenic sapphire oscillators or combs locked to cavity-stabilized lasers. This approach is of interest for the distribution of ultra-stable microwave signals in a very simple photonic configuration.

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Section: Introductionmentioning

confidence: 99%

Phase noise mitigation of the microwave-to-photonic conversion process using feedback on the laser current

Teyssieux¹,

Boudot²,

Fluhr³

2022

J. Opt. Soc. Am. B

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“…Several important applications, such as high-speed data telecommunication systems [1], direct-modulation optoelectronic oscillators [2,3], or optical sampling with gain-switched pulses [4], require operating semiconductor lasers under high-frequency modulation of the pump current. A crucial parameter to model and predict the behaviour of semiconductor lasers under such operating conditions is the linewidth enhancement factor (LEF), typically indicated as α [5].…”

mentioning

confidence: 99%

Determination of the linewidth enhancement factor of semiconductor lasers by complete optical field reconstruction

Sinquin¹,

Romanelli²

2023

Opt. Lett.

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We show that the method of complete optical field reconstruction introduced by Debeau et al. [Opt. Lett. 23, 1784 (1998)10.1364/OL.23.001784] allows a precise determination of the linewidth enhancement factor (LEF) of semiconductor lasers. We determine experimentally the LEF with 3% uncertainty. The method is rather simple and reliable, and is of interest in the context of microwave photonics. While particularly adapted to actively modulated devices, the proposed approach can in principle be applied to any laser exhibiting a time-periodic behavior.

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Dual‐channel, high‐frequency optoelectronic oscillators utilizing optically‐injected lasers

Jeong,

Nguyen,

Sung

2024

Micro & Optical Tech Letters

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We propose a novel approach to dual‐channel optoelectronic oscillators (OEOs) with enhanced frequency band by leveraging directly modulated (DM) semiconductor lasers under optical injection. In this configuration, the frequency‐tuned optical signal from a master laser is introduced into a single‐mode slave laser, facilitating multioptical‐mode operation. The resulting multiple optical frequencies emitted by the slave laser facilitates a DM‐OEO signal at a frequency exceeding the laser's intrinsic modulation bandwidth. Through the deployment of a dual‐channel OEO based on the DM multimode laser signal, stable oscillation signals have been successfully achieved simultaneously at 15 and 18 GHz with phase noise levels of 96.43 and 95.62 dBc/Hz, respectively, at a 10‐kHz offset frequency.

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Low Phase Noise Direct-Modulation Optoelectronic Oscillator

Cited by 13 publications

References 16 publications

Phase noise mitigation of the microwave-to-photonic conversion process using feedback on the laser current

Phase noise mitigation of the microwave-to-photonic conversion process using feedback on the laser current

Determination of the linewidth enhancement factor of semiconductor lasers by complete optical field reconstruction

Dual‐channel, high‐frequency optoelectronic oscillators utilizing optically‐injected lasers

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