Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

Streshinsky, Matthew; Ding, Ran; Liu, Yang; Novack, Ari; Yang, Yisu; Ma, Yangjin; Tu, Xiaoguang; Chee, Edward Koh Sing; Lim, Andy Eu-Jin; Lo, Patrick; Baehr‐Jones, Tom; Hochberg, Michael

doi:10.1364/oe.21.030350

Cited by 169 publications

(80 citation statements)

References 21 publications

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“…Mach-Zehnder interferometer (MZI) and ring resonator based silicon modulators exploiting the plasma dispersion effect were extensively optimized over the past few years [3][4][5][6] and play a critical role in silicon transceiver prototypes emerging now [7][8][9]. However, MZI based modulators suffer from a large footprint, typically a few millimeters [6], and ring or disk modulators exhibit a narrow optical bandwidth, making them difficult to control and sensitive to temperature variations or fabrication errors [5]. Ge or SiGe electro-absorption modulators (EAM) are a promising alternative for these plasma dispersion based modulators.…”

Section: Introductionmentioning

confidence: 99%

“…Si MachZehnder Modulator [6] Graphene-Si EAM [15] ~40x10 1500 3 >180 n/a 2.4 n/a n/a n/a n/a 1.2 n/a Graphene-Si EAM [22] 80 x80 1550 7.5 <0.1 n/a n/a 12.5 n/a n/a 800 30 22 * Assuming balanced Mach-Zehnder modulator with broadband 3dB splitters, # Mach-Zehnder bias control, § Bandwidth can be traded for temperature tolerance, ‡ The transmitter penalty is defined as TP=(P out (1)-P out (0))/(2×P in ) where P out (1) and P out (0) are the high and low level of output optical power from the modulator and P in is the input optical power [12].…”

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confidence: 99%

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Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Pantouvaki

Campenhout

et al. 2016

Laser & Photonics Reviews

162

156

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High performance integrated optical modulators are highly desired for future optical interconnects. The ultra-high bandwidth and broadband operation potentially offered by graphene based electro-absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro-absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 µm-length hybrid graphene-Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best-in-class Si (Ge) modulators for future chip-level optical interconnects.

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Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Pantouvaki

Campenhout

et al. 2016

Laser & Photonics Reviews

162

156

View full text Add to dashboard Cite

show abstract

“…[15][16][17] Electrical contacts incorporated into the photonic structure can rapidly modulate and reconfigure these components by free-carrier injection on fast timescales. 18,19 Silicon is also compatible with standard CMOS fabrication methods that can combine electronics with photonics on a large scale. 15,16 For these reasons, silicon photonics can achieve the most complex integrated photonic structures to date composed of thousands of optical components in a single chip.…”

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confidence: 99%

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip

et al. 2017

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Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pickand-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision.We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.Photonic quantum information processors use multiple interacting photons to implement quantum computors, 1,2 simulators, 3,4 and networks. [5][6][7][8] These applications require efficient single photon sources coupled to photonic circuits that implement qubit interactions to create highly connected multi-qubit systems. [8][9][10][11] Scalable photonic quantum information processors require methods to integrate single photon sources with compact photonic devices that can combine many optical components. Such integration could enable complex quantum information processors in a compact solid-state material. [12][13][14] Silicon has many advantages as a material for integrated quantum photonic devices. It has a large refractive index that enables many photonic components to fit into a small device size. [15][16][17] Electrical contacts incorporated into the photonic structure can rapidly modulate and reconfigure

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“…The QPP phases can be programmed on microsecond timescales [63]. High-speed phase modulators are available in the silicon photonics platform with switching rates of tens of gigahertz [64], although insertion losses limit their usage for quantum optics. The fast reconfigurability of this circuit enables experiments that explore many different phase settings, [28].…”

Section: Large-scale Linear Optical Circuitsmentioning

confidence: 99%

Large-scale quantum photonic circuits in silicon

et al. 2016

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Quantum information science offers inherently more powerful methods for communication, computation, and precision measurement that take advantage of quantum superposition and entanglement. In recent years, theoretical and experimental advances in quantum computing and simulation with photons have spurred great interest in developing large photonic entangled states that challenge today's classical computers. As experiments have increased in complexity, there has been an increasing need to transition bulk optics experiments to integrated photonics platforms to control more spatial modes with higher fidelity and phase stability. The silicon-on-insulator (SOI) nanophotonics platform offers new possibilities for quantum optics, including the integration of bright, nonclassical light sources, based on the large third-order nonlinearity (χ (3) ) of silicon, alongside quantum state manipulation circuits with thousands of optical elements, all on a single phase-stable chip. How large do these photonic systems need to be? Recent theoretical work on Boson Sampling suggests that even the problem of sampling from ~30 identical photons, having passed through an interferometer of hundreds of modes, becomes challenging for classical computers. While experiments of this size are still challenging, the SOI platform has the required component density to enable low-loss and programmable interferometers for manipulating hundreds of spatial modes.Here, we discuss the SOI nanophotonics platform for quantum photonic circuits with hundreds-to-thousands of optical elements and the associated challenges. We compare SOI to competing technologies in terms of requirements for quantum optical systems. We review recent results on large-scale quantum state evolution circuits and strategies for realizing high-fidelity heralded gates with imperfect, practical systems. Next, we review recent results on silicon photonics-based photonpair sources and device architectures, and we discuss a path towards large-scale source integration. Finally, we review monolithic integration strategies for single-photon detectors and their essential role in on-chip feed forward operations.

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Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

Cited by 169 publications

References 21 publications

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip

Large-scale quantum photonic circuits in silicon

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