Low-Power and Ultra-Thin MoS₂ Photodetectors on Glass

Abstract

Integration of low-power consumer electronics on glass can revolutionize the automotive and transport sectors, packaging industry, smart building and interior design, healthcare, life science engineering, display technologies, and many other applications. However, direct growth of high-performance, scalable, and reliable electronic materials on glass is difficult owing to low thermal budget. Similarly, development of energy-efficient electronic and optoelectronic devices on glass requires manufacturing innovations. Here, we accomplish both by relatively low-temperature (<600 °C) metal−organic chemical vapor deposition growth of atomically thin MoS 2 on multicomponent glass and fabrication of low-power phototransistors using atomic layer deposition (ALD)-grown, high-k, and ultra-thin (∼20 nm) Al 2 O 3 as the top-gate dielectric, circumventing the challenges associated with the ALD nucleation of oxides on inert basal planes of van der Waals materials. The MoS 2 photodetectors demonstrate the ability to detect low-intensity visible light at high speed and low energy expenditure of ∼100 pico Joules. Furthermore, low device-to-device performance variation across the entire 1 cm 2 substrate and aggressive channel length scalability confirm the technology readiness level of ultra-thin MoS 2 photodetectors on glass.

Benchmarking monolayer MoS2 and WS2 field-effect transistors

“…Recently, a microprocessor based on MoS 2 FETs was reported 13 . Additionally, 2D FETs have found applications in various emerging technologies such as sensors for internet of things, neuromorphic computing, biomimetic devices, valleytronics, straintronics, and optoelectronic devices [14][15][16][17][18][19][20][21] . While initial demonstrations of prototype devices relied on exfoliated flakes, the 2D community has rapidly transitioned towards the growth of large-area films to address manufacturing needs for any commercial applications.…”

MoS2/Paper Decorated with Metal Nanoparticles (Au, Pt, and Pd) Based Plasmonic‐Enhanced Broadband (Visible‐NIR) Flexible Photodetectors

“…Signal to noise ratio (SNR) and energy consumption are critical parameters for a photodetector. [44,45] SNR is defined as SNR = Signal power /Noise power and SNR of the fabricated device was found to be ≈143 dB and detailed calculation procedure is included in the Supporting Information. Further energy consumption of the fabricated photodetector was calculated to be ≈151 µJ.…”

Improved Performances of CVD‐Grown MoS2 Based Phototransistors Enabled by Encapsulation

“…It is noted that the low dark current of the order of picoampere in the depletion region guarantees the high signal‐to‐noise ratio (SNR) of ≈30 dB and low energy consumption of nano‐Joules, which are comparable with state‐of‐the‐art technologies. [ 19,20 ]…”

“…[ 13–17 ] Recently, Das group has developed the high quality and uniform growth of TMDs using the metal‐organic chemical vapor deposition (MOCVD) technique and benchmarked device‐to‐device variation in transistors across 1 × 1 cm 2 chips, a record high carrier mobility of 46 and 33 cm 2 Vs −1 is demonstrated for monolayer MoS 2 and WS 2 , respectively. [ 18 ] The high quality of monolayer MoS 2 has enabled the ultrasensitive photodetectors with high speed and low energy expenditure of ≈100 pico Joules, [ 19,20 ] which can be further applied successfully in collision avoidance systems as low‐power biomimetic collision detector. [ 21 ]…”