Low power consumption photoelectric coupling perovskite memristor with adjustable threshold voltage

Abstract

Organic–inorganic halide perovskites (OHPs) have been proven to possess unique optical and electrical properties, and achieved more extensive application as excellent materials for memristors in recent years. Based on the traditional OHP-based memristors, the intermediate layer of the memristor was prepared using yttrium oxide (Y2O3)/OHP stacking structure in this manuscript. The potential barrier between Y2O3 and perovskite is relatively high (ΔE C = 2.13 eV) which leads to comparatively low current of the memristor, thus the power consumption can be reduced. Besides, by changing the external light conditions, one can realize sharp or slow switch between high resistance state (HRS) and low resistance state (LRS), so as to meet the requirement of multilevel data storage, which indicates its promising application prospect in information storage and biological simulation. In addition, based on characteristics of photoelectric coupling, the Y2O3/OHP memristor can also achieve the advantage of adjustable threshold voltage. The transition of HRS and LRS can be realized by changing the illumination condition at any voltage, which means the set and reset voltage are not fixed, so that the memristor with adjustable threshold voltage can adapt to various working conditions.

Multi-functional hybrid perovskites with triple-channel switches and optical properties

“…6,10,[17][18][19][20][21][22][23] Notably, LHPs have already shown great promise in a wide range of technological applications in the fields of energy, displays, and communication. [24][25][26][27][28][29][30][31] More importantly, the exploration of the relationship between the structure and performance of LHPs will further promote their commercial application process. [32][33][34][35][36][37] Benefiting from their greater structural diversity and chemical variability, LHPs could be designed and synthesized by chemical strategies, such as halogen substitution theory, which provides endless possibilities to construct multi-functional and highperformance hybrid perovskites.…”

“…6,10,17–23 Notably, LHPs have already shown great promise in a wide range of technological applications in the fields of energy, displays, and communication. 24–31 More importantly, the exploration of the relationship between the structure and performance of LHPs will further promote their commercial application process. 32–37…”

In Situ Unveiling of the Resistive Switching Mechanism of Halide Perovskite-Based Memristors

“…To analyze the resistive switching mechanism of the ITO/CH 3 NH 3 PbI 3 /MoO 3 /Ag memristor, we replot and fit the I – V curve of the memristor prepared with the precursor concentration of 1.5 mol/L under the double logarithmic coordinates of the forward scanning region, as shown in Figure a. As previously reported, , the resistance switching behavior can be roughly divided into three individual regions: an ohmic region ( I ∝ V ), a trap filling limit (TFL) region, and a space charge limiting conduction (SCLC) region ( I ∝ V 2 ). In the low-voltage region of HRS (from 0 to 0.21 V), the slope of the fitted line is equal to 1.04 (Figure S3a, Supporting Information), which indicates that the ohmic conduction is dominant, as the weak current injection cannot completely fill the traps.…”

“…Among them, the halide perovskite has been considered as a promising candidate for memristor demonstrations owing to the favorable advantages in outstanding hysteresis effect, fast ion migration, and solution processability. 1,19,20 To date, perovskite memristors have achieved large resistance switching ratio (ON/OFF ratio, the ratio of high resistance to low resistance at the same voltage) of 10 9 , 21 good cycle endurance of 10 6 , 22 long retention time of 4.2 × 10 7 seconds, 22 low power consumption of <5 × 10 −8 mW, 23 and multilevel storage capabilities, 24 which are comparable to or even better than rivals. 6,8,9 In addition, perovskite-based memristors have been applied in demonstrations of a logic gate circuit, 25−27 high density cross matrix memory, 22,28 and artificial synapse with neuromorphic computing.…”

“…metal–insulator–metal, MIM). , The full-hardware artificial neural networks (e.g., convolutional neural networks, CNNs) and low-power artificial dendrites with computing function have been realized by memristors. , In the past decades, various kinds of materials have been explored as the functional layer of memristors, such as the two-dimensional (2D) materials, − binary oxides, − binary nitrides, , organic materials, , halide perovskites, − etc . Among them, the halide perovskite has been considered as a promising candidate for memristor demonstrations owing to the favorable advantages in outstanding hysteresis effect, fast ion migration, and solution processability. ,, To date, perovskite memristors have achieved large resistance switching ratio (ON/OFF ratio, the ratio of high resistance to low resistance at the same voltage) of 10 9 , good cycle endurance of 10 6 , long retention time of 4.2 × 10 7 seconds, low power consumption of <5 × 10 –8 mW, and multilevel storage capabilities, which are comparable to or even better than rivals. ,, In addition, perovskite-based memristors have been applied in demonstrations of a logic gate circuit, − high density cross matrix memory, , and artificial synapse with neuromorphic computing. − …”