Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films

Lazarenko, Petr; Kovalyuk, Vadim; An, Pavel; Kozyukhin, S. A.; Takáts, Viktor; Golikov, Alexander; Glukhenkaya, Victoria B.; Vorobyov, Yu. V.; Kulevoy, T. V.; Шерченков, А. А.; Gol’tsman, G.

doi:10.1016/j.actamat.2022.117994

Cited by 16 publications

(4 citation statements)

References 74 publications

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“…By applying the electric pulse stimulus of (3.5 V, 200 μs) for crystallization and (5.0 V, 50 μs) for amorphization, the extinction ratio reaches 50 dB (Figure 4b), which is 5 times of the previous reported works. [13][14][15][16]22,27] Compared to other PCM-integrated PICs based on the structure of Mach−Zehnder Interferometer (MZI) or micro ring resonator (MRR) with large footprints (generally over than 30 μm), the present device is much more conducive to the high-density integration on chips due to its compact structure (3 μm long).…”

Section: Ultrahigh Extinction Ratio Of the Photonic Devicementioning

confidence: 99%

“…[13,[21][22][23][24] However, the PCM-integrated photonic device is still far from meeting the requirements in a real-world applications due to its poor endurance (<3000 cycles), which is far lower than the traditional PCM-based electrical switching devices with endurance of up to 10 12 . [25] Till now, three tuning methods of PCMs in PICs have been reported: free-space optical switching, [26,27] on-chip optical switching [15,18,28] and electrical switching. [13,22,29] Free-space optical switching utilizes far-field focused laser pulses to switch PCMs, which asks for complex optical alignment set-up and shows poor endurance (<10 cycles) and limited extinction ratio (<10 dB).…”

Section: Introductionmentioning

confidence: 99%

“…Till now, three tuning methods of PCMs in PICs have been reported: free‐space optical switching, [ 26,27 ] on‐chip optical switching [ 15,18,28 ] and electrical switching. [ 13,22,29 ] Free‐space optical switching utilizes far‐field focused laser pulses to switch PCMs, which asks for complex optical alignment set‐up and shows poor endurance (<10 cycles) and limited extinction ratio (<10 dB).…”

Section: Introductionmentioning

confidence: 99%

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Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Xia,

Wang,

Yang

et al. 2024

Laser & Photonics Reviews

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Phase‐change‐materials (PCMs) integrated photonics have attracted extensive attention in the field of optical neural networks. However, present PCMs‐integrated photonics are still far from meeting the requirements in real‐world applications due to its unsatisfactory endurance (<3000 cycles) and extinction ratio (ER<20 dB). Here, ultrahigh endurance (>30 000 cycles) and large ER (≥50 dB) are achieved in the photonic device by introducing a trench structure to the indium tin oxide (ITO) heater and utilizing tin‐doped Ge2Sb2Te5 (Sn‐GST) as PCMs. This performance represents a landmark in the PCMs‐integrated photonics, since it solves the problem of poor endurance of ITO heaters and can be comparable to the state‐of the‐art devices in terms of endurance and ER. This excellent endurance and ER stem from the trench structure and high optical contrast PCM of Sn‐GST. Trench structure improves the heating efficiency of the ITO heater and effectively alleviates the thermal stress imposed on the ITO heater, resulting in ultrahigh endurance of the device. Sn‐doping is also beneficial to the endurance and ER improvement, because it can effectively reduce the crystallization temperature and increase the absorption coefficient of the PCM layer. This work provides a new technology for the development of programmable photonics with ultrahigh endurance.

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Section: Ultrahigh Extinction Ratio Of the Photonic Devicementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Xia,

Wang,

Yang

et al. 2024

Laser & Photonics Reviews

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show abstract

“…Reducing the energy requirements is an important metric of performance evaluation; Lazarenko et al [93] proposed Sndoped GST thin films loaded on Si 3 N 4 waveguide (see figure 3(G)). The doped Sn atoms replace the Ge atoms due to the formation of low-energy Sn-Te bonds resulting in changes to the optical property and laser write energies.…”

Section: Loading On Conventional Microphotonic Componentswaveguides A...mentioning

confidence: 99%

Recent developments in Chalcogenide phase change material-based nanophotonics

Tripathi,

Vyas,

Kumar

et al. 2023

Nanotechnology

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There is now a deep interest in actively reconfigurable nanophotonics as they will enable the next generation of optical devices. Of the various alternatives being explored for reconfigurable nanophotonics, Chalcogenide phase change materials (PCMs) are considered highly promising owing to the nonvolatile nature of their phase change. Chalcogenide PCM nanophotonics can be broadly classified into integrated photonics (with guided wave light propagation) and Meta-optics (with free space light propagation). Despite some early comprehensive reviews, the pace of development in the last few years has shown the need for a topical review. Our comprehensive review covers recent progress on nanophotonic architectures, tuning mechanisms, and functionalities in tunable PCM Chalcogenides. In terms of integrated photonics, we identify novel PCM nanoantenna geometries, novel material utilization, the use of nanostructured waveguides, and sophisticated excitation pulsing schemes. On the meta-optics front, the breadth of functionalities has expanded, enabled by exploring design aspects for better performance. The review identifies immediate, and intermediate-term challenges and opportunities in (1) the development of novel chalcogenide PCM, (2) advance in tuning mechanism, and (3) formal inverse design methods, including machine learning augmented inverse design, and provides perspectives on these aspects. The topical review will interest researchers in further advancing this rapidly growing subfield of nanophotonics.

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Germanium monotelluride-based solid solutions as whole-visible dielectric-metallic-transition material platforms for programmable metasurfaces

Wang

et al. 2023

Acta Materialia

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Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films

Cited by 16 publications

References 74 publications

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Recent developments in Chalcogenide phase change material-based nanophotonics

Germanium monotelluride-based solid solutions as whole-visible dielectric-metallic-transition material platforms for programmable metasurfaces

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