Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template

Katagiri, Yusuke; Kishino, S.; Okuura, Kazuki; Miyake, Hideto; Hiramatu, Kazumasa

doi:10.1016/j.jcrysgro.2009.01.022

Cited by 55 publications

(44 citation statements)

References 12 publications

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“…They have achieved 350 nm-band UV-LDs and a 345 nm UV-LED with a high EQE (>6.7%) on the ELOAlGaN templates [11]. A high crystalline quality ELOAlN template was also fabricated by using hydride vaporphase epitaxy (HVPE) [12]. Also, an improvement in lifeWe have fabricated low threading dislocation density (TDD) AlN templates on sapphire substrates for application to deepultraviolet (DUV) light-emitting diodes (LEDs) by employing an epitaxial lateral overgrowth (ELO) process.…”

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confidence: 99%

Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs

Hasegawa

Fujikawa

Norimatsu

et al. 2009

Phys. Status Solidi (c)

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We have fabricated low threading dislocation density (TDD) AlN templates on sapphire substrates for application to deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) by employing an epitaxial lateral overgrowth (ELO) process. An AlN stripe structure with a width of 5 μm and a spacing of 3 μm was formed by using inductive coupled plasma (ICP) etching. The AlN stripes were completely coalesced and embedded to create a flat surface after the growth of an approximately 15 μm‐thick ELO‐AlN layer, grown by low‐pressure metal‐organic chemical vapor deposition (LP‐MOCVD). We systematically investigated the appropriate V/III ratio and growth temperature for the ELO‐AlN. The edge‐type TDD of the AlN was reduced from 2×109 cm–2 (AlN stripe region) to 3×108 cm–2 (in the wing region of the ELO‐AlN), as estimated by cross‐sectional transmission electron microscope (TEM) imaging. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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confidence: 99%

Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs

Hasegawa

Fujikawa

Norimatsu

et al. 2009

Phys. Status Solidi (c)

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“…They have achieved 350 nm-band UV-LDs and a 345 nm UV-LED with a high EQE (>6.7%) on the ELO-AlGaN templates [17]. A high crystalline quality ELO-AlN template was also fabricated by using hydride vapor-phase epitaxy (HVPE) [18]. University of South Carolina has reported DUV-LEDs fabricated on ELO-AlN templates [19].…”

mentioning

confidence: 99%

Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates

Hasegawa

Norimatsu

Noguchi

et al. 2009

Phys. Status Solidi (c)

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We demonstrated CW milliwatt power operations of 270 nm‐band AlGaN multi‐quantum well (MQW) deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) fabricated on epitaxial lateral overgrowth (ELO) AlN templates on sapphire. An initial AlN stripe layer was grown directly on sapphire by using ammonia (NH3) pulse‐flow multilayer (ML) growth method. An AlN stripe structure with a width of 5 μm and a spacing of 3 μm was completely coalesced after the growth of an approximately 15 μm‐thick ELO‐AlN layer grown by low‐pressure metal‐organic chemical vapor deposition (LP‐MOCVD). The edge‐type threading dislocation density (TDD) of the wing region of the ELO‐AlN layer was 3×108 cm‐2, as observed by cross‐sectional transmission electron microscope (TEM) image. The maximum output power of 2.7 mW was obtained from an AlGaN MQW LED with emission wavelength at 273 nm fabricated on ELO‐AlN template under room temperature (RT) CW operation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…These data allow the determination of mean values of residual stress. For all reactor designs and all optimized conditions by the authors [18][19][20][21][22][23][24][25][26][27][28], FWHM values were in the range of 100 to 600 arcsec and 500 to 800 arcsec for on-axis and off-axis peak, respectively. It is clear that the optimal temperature range is 1200-1400 • C to increase the Al mobility on the surface while avoiding sapphire degradation and/or etching [38].…”

Section: Introductionmentioning

confidence: 96%

“…In most recent papers [17][18][19][20][21][22][23][24][25][26][27][28] dealing with HVPE growth of AlN at high temperature from chlorinated precursors, intense efforts have been made to reduce defect densities caused by stress [29][30][31] before optimizing optical properties [18]. In situ etching to control void formation and stress release [17], multi-step methods to control island coalescence [32][33][34] or N/Al ratio [33,35], pulse injection of precursors [36], substrate position in turbulent flow [37] have been proposed to reduce strain, high dislocation densities and the appearance of cracks.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

et al. 2017

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Abstract:This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of the HVPE epitaxial growth of AlN on (0001) sapphire will illustrate this approach. The study proposes the assessment of the influence of 15 process parameters on the quality or desired properties of the grown layers measured by 9 responses. The general method used is a screening design with the Hadamard matrix of order 16. For the first time in the growth of AlN by CVD, a reliable estimation of errors is proposed on the measured responses. This study demonstrates that uncontrolled release of condensed species from the cold wall is the main drawback of this process, explaining many properties of the grown layers that could be mistakenly attributed to other phenomena without the use of a DOE. It appears also that the size of nucleation islands, and its corollary, the stress state of the layer at room temperature, are key points. They are strongly correlated to the crystal quality. Due to the intrinsic limitations of the screening design, the complete optimization of responses cannot be proposed but general guidelines for hydride (or halogen) vapor phase epitaxy (HVPE) experimentations, in particular with cold wall apparatus, are given.

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Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template

Cited by 55 publications

References 12 publications

Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs

Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs

Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates

Epitaxial Growth of AlN on (0001) Sapphire: Assessment of HVPE Process by a Design of Experiments Approach

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